Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having a circuitformed using a thin film transistor (hereinafter referred to as TFT) anda manufacturing method thereof. For example, the present inventionrelates to an electronic appliance in which an electro-optical devicetypified by a liquid crystal display panel or a light-emitting displaydevice including an organic light-emitting element is mounted as itscomponent.

Note that the semiconductor device in this specification refers to allthe devices which can operate by using semiconductor characteristics,and an electro-optical device, a semiconductor circuit, and anelectronic appliance are all semiconductor devices.

2. Description of the Related Art

Various metal oxides are used for a variety of applications. Indiumoxide is a well-known material and is used as a transparent electrodematerial which is necessary for liquid crystal displays and the like.

Some metal oxides have semiconductor characteristics. Metal oxideshaving semiconductor characteristics are a kind of compoundsemiconductor. The compound semiconductor is a semiconductor formedusing two or more kinds of atoms bonded together. In general, metaloxides become insulators. However, it is known that metal oxides becomesemiconductors depending on the combination of elements included in themetal oxides.

For example, it is known that tungsten oxide, tin oxide, indium oxide,zinc oxide, and the like are metal oxides which have semiconductorcharacteristics. A thin film transistor in which a transparentsemiconductor layer which is formed using such a metal oxide serves as achannel formation region is disclosed (Patent Documents 1 to 4 andNon-Patent Document 1).

Further, not only single-component oxides but also multi-componentoxides are known as metal oxides. For example, InGaO₃(ZnO)_(m) (m is anatural number), which is a homologous compound, is a known material(Non-Patent Documents 2 to 4).

Furthermore, it is confirmed that such an In—Ga—Zn-based oxide isapplicable to a channel layer of a thin film transistor (Patent Document5 and Non-Patent Documents 5 and 6).

Further, attention has been drawn to a technique for manufacturing athin film transistor using an oxide semiconductor, and applying the thinfilm transistor to an electronic device or an optical device. Forexample, Patent Document 6 and Patent Document 7 disclose a technique bywhich a thin film transistor is manufactured using zinc oxide or anIn—Ga—Zn—O-based oxide semiconductor as an oxide semiconductor film andsuch a thin film transistor is used as a switching element or the likeof an image display device.

[Patent Document]

[Patent Document 1] Japanese Published Patent Application No. S60-198861[Patent Document 2] Japanese Published Patent Application No. H8-264794[Patent Document 3] Japanese Translation of PCT InternationalApplication No. H11-505377

[Patent Document 4] Japanese Published Patent Application No.2000-150900 [Patent Document 5] Japanese Published Patent ApplicationNo. 2004-103957 [Patent Document 6] Japanese Published PatentApplication No. 2007-123861 [Patent Document 7] Japanese PublishedPatent Application No. 2007-096055 [Non-Patent Document]12091

[Non-Patent Document 1] M. W. Prins, K. O. Grosse-Holz, G. Muller, J. F.M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, “Aferroelectric transparent thin-film transistor”, Appl. Phys. Lett., 17Jun. 1996, Vol. 68 pp. 3650-3652[Non-Patent Document 2] M. Nakamura, N. Kimizuka, and T. Mohri, “ThePhase Relations in the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J. SolidState Chem., 1991, Vol. 93, pp. 298-315[Non-Patent Document 3] N. Kimizuka, M. Isobe, and M. Nakamura,“Syntheses and Single-Crystal Data of Homologous Compounds,In₂O₃(ZnO)_(m) (m=3, 4, and 5), InGaO₃(ZnO)₃, and Ga₂O₃(ZnO)_(m) (m=7,8, 9, and 16) in the In₂O₃—ZnGa₂O₄—ZnO System”, J. Solid State Chem.,1995, Vol. 116, pp. 170-178[Non-Patent Document 4] M. Nakamura, N. Kimizuka, T. Mohri, and M.Isobe, “Homologous Series, Synthesis and Crystal Structure ofInFeO₃(ZnO)_(m) (m: natural number) and its Isostructural Compound”,KOTAI BUTSURI (SOLID STATE PHYSICS), 1993, Vol. 28, No. 5, pp. 317-327[Non-Patent Document 5] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M.Hirano, and H. Hosono, “Thin-film transistor fabricated insingle-crystalline transparent oxide semiconductor”, SCIENCE, 2003, Vol.300, pp. 1269-1272[Non-Patent Document 6] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M.Hirano, and H. Hosono, “Room-temperature fabrication of transparentflexible thin-film transistors using amorphous oxide semiconductors”,NATURE, 2004, Vol. 432 pp. 488-492

SUMMARY OF THE INVENTION

An object is to provide a semiconductor device which includes a thinfilm transistor having an oxide semiconductor layer and excellentelectrical characteristics.

Further, another object is to provide a method for manufacturing asemiconductor device in which plural kinds of thin film transistors ofdifferent structures are formed over one substrate to form plural kindsof circuits and in which the number of steps is not greatly increased.

After a metal thin film is formed over an insulating surface, an oxidesemiconductor layer which is thicker than the metal thin film is formedthereover. Then, oxidation treatment such as heat treatment is performedto oxidize the metal thin film partly or entirely. As the metal thinfilm, a material which serves as a semiconductor after the oxidationtreatment can be used, for example, indium, zinc, tin, molybdenum, ortungsten is preferable. The oxidized metal thin film becomes a firstoxide semiconductor layer, whereby a stack of the first oxidesemiconductor layer and the overlaying second oxide semiconductor layeris obtained. Note that the first oxide semiconductor layer has lowerelectrical resistivity (that is, higher electrical conductivity) thanthe second oxide semiconductor layer. Further, the distance between thefirst oxide semiconductor layer and a gate electrode is shorter than thedistance between the second oxide semiconductor layer and the gateelectrode. The first oxide semiconductor layer is in contact with atleast a gate insulating film. By manufacturing a thin film transistorusing this stack of layers, a thin film transistor with excellentelectrical characteristics (e.g., electrical field mobility) can beobtained.

A structure according to an embodiment of the present inventiondisclosed by this specification is a method for manufacturing asemiconductor device, which includes the steps of forming a gateelectrode over an insulating surface, forming an insulating layer overthe gate electrode, forming a metal thin film over the insulating layer,forming an oxide semiconductor layer over the metal thin film, andperforming oxidation treatment for oxidizing the metal thin film atleast partly after formation of the oxide semiconductor layer.

With the above structure, at least one of the above problems can beresolved.

The metal thin film is formed by a sputtering method, a vacuum vapordeposition method, a coating method, or the like. The thickness of themetal thin film is more than 0 nm and equal to or less than 10 nm,preferably, 3 nm to 5 nm inclusive. A stack of different metal thinfilms may alternatively be used, the total thickness of which is equalto or less than 10 nm Note that to oxidize the metal thin film at leastpartly means to oxidize the metal thin film to the extent that the thinfilm transistor can function and exhibit switching characteristics. Inother words, the metal thin film is oxidized so as not to cause a statein which there is hardly any difference between the amount of currentflowing between a source electrode and a drain electrode between whenvoltage is applied to a gate and when voltage is not applied to the gateor a state in which the source electrode and the drain electrode areelectrically conducted.

Further, the oxidation treatment is heat treatment (at 200° C. to 600°C.) which is performed in any one of an atmosphere containing oxygen,air, and a nitrogen atmosphere. Even in a nitrogen atmosphere, by heattreatment, the metal thin film combines with oxygen in the oxidesemiconductor layer (the second oxide semiconductor layer) which is onand in contact with the metal thin film and thus the metal thin film isoxidized. In this case, due to the presence of the metal thin film,oxygen in the second oxide semiconductor layer is extracted, whereby anoxygen deficient region can be formed in the second oxide semiconductorlayer. In addition, without limitation to heat treatment in a nitrogenatmosphere, oxygen in the second oxide semiconductor layer is extracteddue to the presence of the metal thin film also by heat treatment in anatmosphere containing oxygen or in air, whereby an oxygen deficientregion can be formed in the second oxide semiconductor layer. By formingthe oxygen deficient region in the second oxide semiconductor layer,electrical field mobility can be improved. Although the interfacebetween the metal thin film and the upper oxide semiconductor layerbecomes unclear by this heat treatment in some cases depending on amaterial of the metal thin film, the oxide semiconductor layer near thegate insulating layer, which is the lower oxide semiconductor layer, andthe upper oxide semiconductor layer have different electricalcharacteristics.

Note that the second oxide semiconductor layer is an oxide semiconductorcontaining at least one of In, M, and Zn and M is one or a plurality ofelements selected from Ga, Fe, Ni, Mn, Co, and the like. Note that Mdoes not include an element such as Cd or Hg, that is, a substanceharmful to the human body. In this specification, if Ga is employed asM, the thin film is referred to as an In—Ga—Zn—O-basednon-single-crystal film. In this specification, a semiconductor layerformed using an oxide semiconductor film containing In, Ga, and Zn isalso referred to as an “IGZO semiconductor layer”. Moreover, in theoxide semiconductor, in some cases, a transition metal element such asFe or Ni or an oxide of the transition metal is contained as an impurityelement in addition to a metal element contained as M. Further, thesecond oxide semiconductor layer may contain an insulating impurity. Asthe impurity, insulating oxide typified by silicon oxide, germaniumoxide, aluminum oxide, or the like; insulating nitride typified bysilicon nitride, aluminum nitride, or the like; or insulating oxynitridesuch as silicon oxynitride or aluminum oxynitride is applied. Theinsulating oxide, the insulating nitride, or the insulating oxynitrideis added to the oxide semiconductor at a concentration at whichelectrical conductivity of the oxide semiconductor does not deteriorate.By containing such an insulating impurity, the oxide semiconductorbecomes difficult to crystallize; thus, characteristics of the thin filmtransistor can be stabilized.

Because the In—Ga—Zn—O-based oxide semiconductor contains the impuritysuch as silicon oxide, crystallization of the oxide semiconductor orgeneration of microcrystal grains can be prevented even when the oxidesemiconductor is subjected to heat treatment at 300° C. to 600° C. In amanufacturing process of the thin film transistor in which anIn—Ga—Zn—O-based oxide semiconductor layer is a channel formationregion, an S value (a subthreshold swing value) or an electrical fieldeffect mobility can be improved by heat treatment. Even in such a case,the thin film transistor can be prevented from being normally-on.Further, even if heat stress or bias stress is added to the thin filmtransistor, a change in threshold voltage can be prevented.

As the oxide semiconductor which is applied to the channel formationregion of the thin film transistor, any of the following oxidesemiconductors can be applied in addition to the above: anIn—Sn—Zn—O-based oxide semiconductor, an In—Al—Zn—O-based oxidesemiconductor, an Sn—Ga—Zn—O-based oxide semiconductor, anAl—Ga—Zn—O-based oxide semiconductor, an Sn—Al—Zn—O-based oxidesemiconductor, an In—Zn—O-based oxide semiconductor, an Sn—Zn—O-basedoxide semiconductor, an Al—Zn—O-based oxide semiconductor, an In—O-basedoxide semiconductor, an Sn—O-based oxide semiconductor, and a Zn—O-basedoxide semiconductor. In other words, by addition of an impurity whichsuppresses crystallization to keep an amorphous state to these oxidesemiconductors, characteristics of the thin film transistor can bestabilized. As the impurity, insulating oxide typified by silicon oxide,germanium oxide, aluminum oxide, or the like; insulating nitridetypified by silicon nitride, aluminum nitride, or the like; orinsulating oxynitride such as silicon oxynitride or aluminum oxynitrideis applied.

For example, in the case where a film of an In—Sn—Zn—O-based oxidesemiconductor to which silicon oxide is added is formed by a sputteringmethod, a target in which In₂O₃, SnO₂, ZnO, and SiO₂ are sintered atpredetermined percentages is used. In the case of the In—Al—Zn—O-basedoxide semiconductor to which silicon oxide is added, a film is formedusing a target in which In₂O₃, Al₂O₃, ZnO, and SiO₂ are sintered atpredetermined percentages.

Further, as an oxide semiconductor for an n⁺-type layer of the thin filmtransistor, an In—Ga—Zn—O-based non-single-crystal film containingnitrogen, that is, an In—Ga—Zn—O—N-based non-single-crystal film (alsoreferred to as an IGZON film) may be used. This In—Ga—Zn—O—N-basednon-single-crystal film is obtained by forming a film of oxynitridecontaining indium, gallium, and zinc using a target including oxidecontaining indium, gallium, and zinc in an atmosphere containing anitrogen gas and then by performing heat treatment on the film.

Further, the thickness of the second oxide semiconductor layer ispreferably larger than at least that of the metal thin film, forexample, two or more times that of the metal thin film. Specifically,the thickness of the second oxide semiconductor layer is 30 nm or moreand preferably 60 nm to 150 nm inclusive. In addition, the second oxidesemiconductor layer preferably contains at least one of the elementscontained in the metal thin film. If the second oxide semiconductorlayer contains at least one of the elements contained in the metal thinfilm, the second oxide semiconductor layer and the metal thin film canbe etched in the same etching step using the same etchant or the sameetching gas, which results in a decrease in the number of manufacturingsteps.

Further, by manufacturing a matrix circuit and a driver circuit over onesubstrate, manufacturing cost of the semiconductor device is reduced.The driver circuit includes, for example, a logic circuit in whichemphasis is placed on the speed of operation. A thin film transistorincluding a stack of the first oxide semiconductor layer and the secondoxide semiconductor layer is used in such a circuit while a thin filmtransistor including a single layer of a third oxide semiconductor layeris used in a matrix circuit forming a pixel portion. In such a manner,structures of the thin film transistors are different between thecircuit in which emphasis is placed on the speed of operation, such as alogic circuit, and the matrix circuit.

Another structure according to an embodiment of the present invention isa semiconductor device which includes a matrix circuit and a drivercircuit which drives the matrix circuit over an insulating surface. Inthe semiconductor device, the driver circuit has a first thin filmtransistor including a stack of a first oxide semiconductor layer and asecond oxide semiconductor layer which overlaps with a first gateelectrode with a first gate insulating film interposed therebetween, andthe matrix circuit includes a second thin film transistor which includesa third oxide semiconductor layer overlapping with a second gateelectrode with a second gate insulating film interposed therebetween. Amaterial of the first oxide semiconductor layer and a material of thesecond oxide semiconductor layer are different from each other, and thematerial of the second oxide semiconductor layer and a material of thethird oxide semiconductor layer are the same.

With the above structure, at least one of the above problems can beresolved.

In the above structure, the first thin film transistor includes thefirst gate insulating film over the first gate electrode, the firstoxide semiconductor layer over the first gate insulating film, and thesecond oxide semiconductor layer over the first oxide semiconductorlayer. The electrical resistivity of the first oxide semiconductor layeris lower than the electrical resistivity of the second oxidesemiconductor layer. In addition, in the above structure, the secondthin film transistor includes the second gate insulating film over thesecond gate electrode and the third oxide semiconductor layer over thesecond gate insulating film.

Methods for manufacturing the above structures are also included in anembodiment of the present invention. One of the methods is a method formanufacturing a semiconductor device including a matrix circuit and adriver circuit for driving the matrix circuit over one substrate. Themethod includes the steps of forming a first oxide semiconductor layerover both a matrix circuit region and a driver circuit region of thesubstrate, removing the first oxide semiconductor layer over the matrixcircuit region by etching, and forming a second oxide semiconductorlayer over the first oxide semiconductor layer in the driver circuitregion and a third oxide semiconductor layer in the matrix circuitregion to form a first thin film transistor including a stack of thefirst oxide semiconductor layer and the second oxide semiconductor layerin the driver circuit region and a second thin film transistor includingthe third oxide semiconductor layer in the matrix circuit region.

Further, it is also possible to form the first oxide semiconductor layerby oxidizing a metal thin film which is formed as selected. Themanufacturing method in such a case is also included in an embodiment ofthe present invention. The method is for manufacturing a semiconductordevice including a matrix circuit and a driver circuit for driving thematrix circuit over one substrate. The method includes the steps offorming a metal thin film over both a matrix circuit region and a drivercircuit region of the substrate, removing the metal thin film over thematrix circuit region by etching, forming an oxide semiconductor layerover the metal thin film in the driver circuit region and in the matrixcircuit region, and performing oxidation treatment for oxidizing themetal thin film after formation of the oxide semiconductor layer to forma first thin film transistor including a stack of a first oxidesemiconductor layer and a second oxide semiconductor layer in the drivercircuit region and a second thin film transistor including a third oxidesemiconductor layer in the matrix circuit region.

In each of the structures manufactured by the above methods, theelectrical resistivity of the first oxide semiconductor layer is lowerthan the electrical resistivity of the second oxide semiconductor layer.Further, in each of the structures manufactured by the above methods, amaterial of the first oxide semiconductor layer and a material of thesecond oxide semiconductor layer are different from each other, and thematerial of the second oxide semiconductor layer and a material of thethird oxide semiconductor layer are the same.

A term indicating a direction such as “on”, “over”, “under”, “below”,“side”, “horizontal”, or “perpendicular” in this specification is basedon the assumption that a device is provided over a substrate surface.

With a stack of oxide semiconductor layers, a semiconductor deviceincluding a thin film transistor with excellent electricalcharacteristics can be realized.

Further, a thin film transistor including a stack of oxide semiconductorlayers and a thin film transistor including a single layer of an oxidesemiconductor layer are formed over one substrate, whereby plural kindsof circuits can be manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are cross-sectional views of an example of amanufacturing process of a semiconductor device.

FIGS. 2A to 2C are a cross-sectional view, an equivalent circuitdiagram, and a top view illustrating an example of a semiconductordevice.

FIG. 3 is an equivalent circuit diagram of an example of a semiconductordevice.

FIGS. 4A and 4B are examples of block diagrams of semiconductor devices.

FIG. 5 illustrates an example of a structure of a signal line drivercircuit.

FIG. 6 is a timing diagram of an example of operation of a signal linedriver circuit.

FIG. 7 is a timing diagram of an example of operation of a signal linedriver circuit.

FIG. 8 illustrates an example of a structure of a shift register.

FIG. 9 illustrates an example of connection in a flip flop illustratedin FIG. 8.

FIG. 10 illustrates an example of a pixel equivalent circuit of asemiconductor device.

FIGS. 11A to 11C are cross-sectional views of examples of semiconductordevices.

FIGS. 12A and 12B are respectively a top view and a cross-sectional viewof an example of a semiconductor device.

FIGS. 13A to 13C are cross-sectional views of an example of amanufacturing process of a semiconductor device.

FIG. 14 is a top view of an example of a pixel.

FIG. 15 is a cross-sectional view of an example of a pixel portion, acapacitor portion, and a terminal portion.

FIGS. 16A and 16B are respectively a top view and a cross-sectional viewof an example of a terminal portion.

FIG. 17 is a top view of an example of a pixel.

FIGS. 18A1 and 18A2 are top views and FIG. 18B is a cross-sectional viewof examples of semiconductor devices.

FIG. 19 is a cross-sectional view of an example of a semiconductordevice.

FIGS. 20A to 20E are cross-sectional views of an example of amanufacturing process of a semiconductor device.

FIGS. 21A to 21C are cross-sectional views of an example of amanufacturing process of a semiconductor device.

FIGS. 22A and 22B are respectively a cross-sectional view and anexternal view of an electronic appliance which are examples ofsemiconductor devices.

FIGS. 23A and 23B are examples of electronic appliances.

FIGS. 24A and 24B are examples of electronic appliances.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, an embodiment of the present invention will be described.

An embodiment will be described in detail with reference to thedrawings. Note that the present invention is not limited to thefollowing description and it will be readily appreciated by thoseskilled in the art that modes and details can be modified in variousways without departing from the spirit and the scope of the presentinvention. Accordingly, the present invention should not be construed asbeing limited to the description of the embodiments to be given below.Note that in structures described below, like portions or portionshaving like functions in different drawings are designated by the likereference numerals and repeated description thereof is omitted.

Embodiment 1

FIGS. 1A to 1D illustrate an example of a manufacturing process in whicha first thin film transistor 430 for a driver circuit and a second thinfilm transistor 170 for a pixel portion (also called a matrix circuit)are formed over the same substrate.

In this embodiment, a novel structure and its manufacturing method isprovided in which thin film transistors with different structures areformed over the same substrate to form a driver circuit capable ofhigh-speed operation and a pixel portion including a thin filmtransistor with a high on/off ratio. Further, in this embodiment, anovel method for manufacturing a thin film transistor in which a stackof oxide semiconductor layers is used as a channel formation region isalso provided.

A driver circuit for driving a pixel portion, which should be capable ofhigh-speed operation, is formed using an inverter circuit, a capacitor,a resistor, and the like. When two n-channel TFTs are combined to forman inverter circuit, there are following combinations: a combination ofan enhancement type transistor and a depletion type transistor(hereinafter, a circuit formed by such a combination is referred to asan EDMOS circuit) and a combination of enhancement type TFTs(hereinafter, a circuit formed by such a combination is referred to asan EEMOS circuit). Note that an n-channel TFT whose threshold voltage ispositive is defined as an enhancement type transistor, while ann-channel TFT whose threshold voltage is negative is defined as adepletion type transistor. This specification follows these definitions.

A thin film transistor in the pixel portion serves as a switch ofvoltage application to a pixel electrode and therefore should have ahigh on/off ratio. The on/off ratio is a ratio of on current to offcurrent (I_(ON)/I_(OFF)), and the higher the value of the I_(ON)/I_(OFF)is, the better the switching characteristics is. Thus, the high on/offratio contributes to improvement of display contrast. Note that oncurrent is current which flows between a source electrode and a drainelectrode when a transistor is in an on state. Meanwhile, off current iscurrent which flows between the source electrode and the drain electrodewhen the transistor is in an off state. For example, in an n-channeltransistor, off current is current which flows between a sourceelectrode and a drain electrode when a gate voltage is lower than athreshold voltage of the transistor. Therefore, an enhancement typetransistor is preferably used for the pixel portion to achieve highcontrast and low-power-consumption driving.

As described above, the electrical characteristics on which emphasis isplaced are different between the pixel portion and the driver circuit.Accordingly, thin film transistors with different structures arepreferably used in the pixel portion and in the driver circuit. In thisembodiment, an example of a manufacturing method for such a case will bedescribed below.

First, a first gate electrode 401 and a second gate electrode 101 areprovided over a substrate 400 having an insulating surface. The firstgate electrode 401 and the second gate electrode 101 can be formed tohave a single-layer structure or a stacked-layer structure using a metalmaterial such as molybdenum, titanium, chromium, tantalum, tungsten,aluminum, copper, neodymium, or scandium, or an alloy materialcontaining any of these materials as the main component.

For example, as a two-layer structure of each of the first gateelectrode 401 and the second gate electrode 101, the followingstructures are preferable: a two-layer structure of an aluminum layerand a molybdenum layer stacked thereover, a two-layer structure of acopper layer and a molybdenum layer stacked thereover, a two-layerstructure of a copper layer and a titanium nitride layer or a tantalumnitride layer stacked thereover, and a two-layer structure of a titaniumnitride layer and a molybdenum layer. Alternatively, a stack including acopper layer containing Ca and a copper oxide layer containing Cathereover, which serves as a barrier layer, or a stack including acopper layer containing Mg and a copper oxide layer containing Mgthereover, which serves as a barrier layer, can be employed. As athree-layer structure, a stack of a tungsten layer or a tungsten nitridelayer, a layer of an alloy of aluminum and silicon or an alloy ofaluminum and titanium, and a titanium nitride layer or a titanium layeris preferable.

Then, a gate insulating layer 403 covering the first gate electrode 401and the second gate electrode 101 is formed. The gate insulating layer403 is formed to a thickness of 50 nm to 400 nm by a sputtering method,a PCVD method, or the like.

For example, a 100-nm-thick silicon oxide film is formed by a sputteringmethod as the gate insulating layer 403. Needless to say, the gateinsulating layer 403 is not limited to such a silicon oxide film and maybe a single layer or a stack of other insulating films such as a siliconoxynitride film, a silicon nitride film, an aluminum oxide film, analuminum nitride film, an aluminum oxynitride film, or a tantalum oxidefilm. In a case of forming a stack of layers, for example, a siliconnitride film may be formed by a PCVD method and then a silicon oxidefilm may be formed thereover by a sputtering method. If a siliconoxynitride film, a silicon nitride film, or the like is used as the gateinsulating layer 403, an impurity like sodium can be prevented fromdiffusing from the glass substrate and entering an oxide semiconductorto be formed later over the substrate.

Alternatively, the gate insulating layer 403 can be formed of a siliconoxide layer by a CVD method using an organosilane gas. As theorganosilane gas, a silicon-containing compound such astetraethoxysilane (TEOS: chemical formula, Si(OC₂H₅)₄),tetramethylsilane (TMS: chemical formula, Si(CH₃)₄),tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane(OMCTS), hexamethyldisilazane (HMDS), triethoxysilane (SiH(OC₂H₅)₃), ortrisdimethylaminosilane (SiH(N(CH₃)₂)₃) can be used.

Then, a metal thin film of indium, zinc, tin, molybdenum, tungsten, orthe like is formed over the gate insulating layer 403. Alternatively, analloy thin film or a stacked-layer of any of those elements can beformed. The metal thin film is formed by a sputtering method, a vacuumvapor deposition method, or a coating method. Here, an indium film isformed by a vapor deposition method to have a thickness of more than 0nm and equal to or less than 10 nm, preferably, 3 nm to 5 nm inclusive.Note that for the metal thin film, a material is selected such that themetal thin film becomes an oxide by heat treatment which is performedlater and the oxide has a lower electrical resistivity than an oxidesemiconductor layer subsequently formed on and in contact with the metalthin film. Further, depending on a material or film-forming conditionfor the metal thin film, the metal thin film does not cover a surface ofthe gate insulating layer 403 and part of the gate insulating layer 403may be exposed in some cases; for example, clusters of the metal may bedispersed over the gate insulating layer 403. Also in the case whereclusters of the metal are dispersed, the electrical field mobility ofthe thin film transistor can be improved as long as the metal becomes anoxide semiconductor by oxidation treatment which is performed later.Further, in the case where clusters of the metal are dispersed, themetal is not limited to the above materials; aluminum, copper, and thelike can be used. Further, a metal thin film of indium may be formedover the clusters in order to improve electrical characteristics of thethin film transistor.

Then, the metal thin film is removed as selected by a photolithographytechnique. Wet etching or dry etching can be used here. Thus, a metalthin film 470 is formed in the driver circuit region. FIG. 1A is across-sectional view of this stage. Note that when a photolithographytechnique is employed, the metal thin film is exposed to air, whereby anative oxide film may be formed on a surface of the metal thin filmdepending on its material. If a native oxide film is formed, it can beused as part of the oxide semiconductor layer.

Alternatively, the metal thin film may be formed only in a desiredregion by employing a sputtering method using a shadow mask by which aregion other than the desired region is covered. Further, by asputtering method using the shadow mask, the oxide semiconductor layercan be formed over the metal thin film without exposure to air. In sucha manner, an interface between the metal thin film and the oxidesemiconductor layer can be kept clean and the number of photomasks canbe reduced.

Then, the oxide semiconductor layer is formed over the metal thin film470 and the gate insulating layer 403. The thickness of the oxidesemiconductor layer is preferably larger than that of the metal thinfilm 470. Specifically, the thickness of the oxide semiconductor layeris equal to or larger than 30 nm, preferably, 60 nm to 150 nm inclusive.In this embodiment, a first In—Ga—Zn—O-based non-single-crystal film isformed as the oxide semiconductor layer. The first In—Ga—Zn—O-basednon-single-crystal film is formed in an argon or oxygen atmosphere usingan oxide semiconductor target having a diameter of 8 inches andcontaining In (indium), Ga (gallium), and Zn (zinc) (the ratio of In₂O₃to Ga₂O₃ to ZnO is 1:1:1 in molar ratio), with the distance between thesubstrate and the target set to 170 mm, under a pressure of 0.4 Pa, andwith a direct-current (DC) power source of 0.5 kW. Note that a pulseddirect current (DC) power source is preferably used so that dust can bereduced and uniform thickness can be achieved.

In the case where an In—Ga—Zn—O-based oxide semiconductor layer isformed by a sputtering method, an oxide semiconductor target containingIn, Ga, and Zn may contain an insulating impurity. The impurity isinsulating oxide typified by silicon oxide, germanium oxide, aluminumoxide, or the like; insulating nitride typified by silicon nitride,aluminum nitride, or the like; insulating oxynitride such as siliconoxynitride or aluminum oxynitride; or the like. For example, SiO₂ ispreferably mixed into the oxide semiconductor target at 0.1 wt % to 10wt % inclusive, more preferably 1 wt % to 6 wt % inclusive.

When the insulating impurity is contained in the oxide semiconductor, afilm of the oxide semiconductor is made amorphous easily. In addition,in the case where the oxide semiconductor film is subjected to heattreatment, crystallization of the oxide semiconductor film can besuppressed.

In addition to the In—Ga—Zn—O-based oxide semiconductor, a similareffect can be obtained by an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, an Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, anSn—Al—Zn—O-based oxide semiconductor, an In—Zn—O-based oxidesemiconductor, an Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-basedoxide semiconductor, an In—O-based oxide semiconductor, an Sn—O-basedoxide semiconductor, and a Zn—O-based oxide semiconductor which containan insulating impurity.

For example, in the case where a film of an In—Sn—Zn—O-based oxidesemiconductor to which silicon oxide is added is formed by a sputteringmethod, a target in which In₂O₃, SnO₂, ZnO, and SiO₂ are sintered atpredetermined percentages is used. In the case of the In—Al—Zn—O-basedoxide semiconductor to which silicon oxide is added, a film is formedusing a target in which In₂O₃, Al₂O₃, ZnO, and SiO₂ are sintered atpredetermined percentages.

Next, an oxide semiconductor film (in this embodiment, a secondIn—Ga—Zn—O-based non-single-crystal film) which has lower resistivitythan the first In—Ga—Zn—O-based non-single-crystal film is formed by asputtering method without exposure to air. Here, sputtering is performedusing a target in which the ratio of In₂O₃ to Ga₂O₃ to ZnO is 1:1:1under deposition conditions where the pressure is 0.4 Pa, the power is500 W, the deposition temperature is room temperature, and an argon gasis introduced at a flow rate of 40 sccm. Despite the intentional use ofthe target in which the ratio of In₂O₃ to Ga₂O₃ to ZnO is 1:1:1, anIn—Ga—Zn—O-based non-single-crystal film including crystal grains with asize of 1 nm to 10 nm immediately after the film formation may beformed. Note that it can be said that the presence or absence of crystalgrains or the density of crystal grains can be adjusted and the diametersize can be adjusted within the range of 1 nm to 10 nm by appropriateadjustment of the composition ratio in the target, the depositionpressure (0.1 Pa to 2.0 Pa), the power (250 W to 3000 W: 8 inches 0),the temperature (room temperature to 100° C.), the reactive sputteringconditions for deposition, or the like. The second In—Ga—Zn—O-basednon-single-crystal film has a thickness of 5 nm to 20 nm. Needless tosay, when the film includes crystal grains, the size of the crystalgrains does not exceed the thickness of the film. In this embodiment,the thickness of the second In—Ga—Zn—O-based non-single-crystal film is5 nm.

The first In—Ga—Zn—O-based non-single-crystal film is formed underconditions different from the conditions for the second In—Ga—Zn—O-basednon-single-crystal film. For example, the first In—Ga—Zn—O-basednon-single-crystal film is formed under conditions where the ratio of anoxygen gas flow rate to an argon gas flow rate is higher than the ratioof an oxygen gas flow rate to an argon gas flow rate under theconditions for the second In—Ga—Zn—O-based non-single-crystal film.Specifically, the second In—Ga—Zn—O-based non-single-crystal film isformed in a rare gas (e.g., argon or helium) atmosphere (or anatmosphere, equal to or less than 10% of which is an oxygen gas andequal to or greater than 90% of which is an argon gas), and the firstIn—Ga—Zn—O-based non-single-crystal film is formed in an oxygenatmosphere (or in an atmosphere in which an oxygen gas flow rate isequal to or more than an argon gas flow rate).

Note that an example in which the second In—Ga—Zn—O-basednon-single-crystal film is provided is described without limitation inthis embodiment. The second In—Ga—Zn—O-based non-single-crystal film isnot necessarily provided.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in one chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in onechamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering method,and a sputtering apparatus used for an ECR sputtering method in whichplasma generated with the use of microwaves is used without using glowdischarge.

In addition, as a deposition method by a sputtering method, there arealso a reactive sputtering method in which a target substance and asputtering gas component are chemically reacted with each other duringdeposition to form a thin film of a compound thereof, and a biassputtering method in which voltage is also applied to a substrate duringdeposition.

Next, a photolithography step is performed to form a resist mask, andthe first In—Ga—Zn—O-based non-single-crystal film and the secondIn—Ga—Zn—O-based non-single-crystal film are etched. Here, unnecessaryportions are removed by wet etching using ITO07N (product of KANTOCHEMICAL CO., INC.), thereby forming oxide semiconductor films 485 a and485 b, which are the first In—Ga—Zn—O-based non-single-crystal films,and oxide semiconductor films 486 a and 486 b, which are the secondIn—Ga—Zn—O-based non-single-crystal films. If an indium film, a zincfilm, or a tin film is used as the metal thin film 470, the metal thinfilm 470 is also etched with ITO07N (product of KANTO CHEMICAL CO.,INC.). In this embodiment, an example in which an indium film is used isemployed; thus, the metal thin film 470 has substantially the same topshape as the oxide semiconductor film 485 a, which is the firstIn—Ga—Zn—O-based non-single-crystal film. Note that etching here is notlimited to wet etching and may be dry etching. FIG. 1B is across-sectional view of this stage.

In the case where the metal thin film 470 remains in the above etchingstep, the metal thin film 470 is subjected to an etching step forremoving the metal thin film 470 as selected by using the same resistmask which is used in the above etching step and a different etchant ora different etching gas.

Next, a photolithography step is performed to form a resist mask, andunnecessary portions are removed by etching, thereby forming a contacthole reaching a wiring or an electrode layer which is formed from thesame material as the gate electrode layer. This contact hole is providedfor direct contact with a conductive film formed later. For example, acontact hole is formed when a thin film transistor whose gate electrodelayer is in direct contact with the source or drain electrode layer isformed in a driver circuit portion, or when a terminal that iselectrically connected to a gate wiring of a terminal portion is formed.Note that an example in which a contact hole is formed by aphotolithography step for direct connection with the conductive film tobe formed later is described here without particular limitation. Thecontact hole reaching the gate electrode layer may be formed later in astep of forming a contact hole for connection with a pixel electrode andthe same material as the pixel electrode may be used for electricalconnection. In the case where the same material as the pixel electrodeis used for electrical connection, the number of masks can be reduced byone.

Then, a conductive film is formed from a metal material by a sputteringmethod or a vacuum vapor deposition method over the oxide semiconductorfilms 486 a and 486 b, which are the second In—Ga—Zn—O-basednon-single-crystal films, and over the gate insulating layer 403.

As the material of the conductive film, there are an element selectedfrom Al, Cr, Ta, Ti, Mo, or W, an alloy including any of the elements,an alloy film including a combination of such elements, and the like.Further, if heat treatment is performed at 200° C. to 600° C., theconductive film preferably has heat resistance for such heat treatment.Since use of Al alone brings disadvantages such as low heat resistanceand a tendency to be corroded, aluminum is used in combination with aconductive material having heat resistance. As a conductive materialhaving heat resistance which is to be used in combination with Al, anelement selected from titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), or scandium (Sc), or analloy including any of the elements, an alloy including a combination ofsuch elements, or nitride including any of the elements can be used.

Here, the conductive film has a single-layer structure of a titaniumfilm. Alternatively, the conductive film may have a two-layer structurein which a titanium film is stacked on an aluminum film. Stillalternatively, the conductive film may have a three-layer structureincluding a Ti film, an aluminum film containing Nd (Al—Nd) which isstacked on the Ti film, and a Ti film formed on these films. Theconductive film may have a single-layer structure of an aluminum filmcontaining silicon.

Then, a resist mask is formed by a photolithography step, andunnecessary portions are removed by etching. Thus, source and drainelectrode layers 105 a and 105 b and n ⁺-type layers 104 a and 104 bserving as source and drain regions are formed in the pixel portionwhile first and second wirings 409 and 410 serving as source and drainelectrode layers and n⁺-type layers 406 a and 406 b serving as sourceand drain regions are formed in the driver circuit portion. Either wetetching or dry etching is used as an etching method at this time. Forexample, when an aluminum film or an aluminum-alloy film is used as theconductive film, wet etching using a mixed solution of phosphoric acid,acetic acid, and nitric acid can be carried out. Here, by wet etchingusing an ammonia hydrogen peroxide mixture (with the ratio of hydrogenperoxide to ammonia to water being 5:2:2), the conductive film of a Tifilm is etched to form the source and drain electrode layers, and thesecond In—Ga—Zn—O-based non-single-crystal film is etched to form then⁺-type layers 104 a and 104 b. In this etching step, an exposed regionof the oxide semiconductor film is partly etched to be an oxidesemiconductor layer 103. Thus, a channel region of the oxidesemiconductor layer 103 between the n⁺-type layers 104 a and 104 b has asmall thickness. The source and drain electrode layers 105 a and 105 band the n+-type layers 104 a and 104 b are etched in the same step byetching using an ammonia hydrogen peroxide mixture; therefore, the endportions of the source and drain electrode layers 105 a and 105 b arealigned with the end portions of the n⁺-type layers 104 a and 104 b, sothat the end portions are continuous as illustrated in FIG. 1C. Throughthe above steps, the second thin film transistor 170 including the oxidesemiconductor layer 103 as its channel formation region can be formed inthe pixel portion.

Next, heat treatment is preferably performed at 200° C. to 600° C.,typically, 300° C. to 500° C. (the heat treatment may be annealing withlight). Here, heat treatment is performed in a nitrogen atmosphere in afurnace at 350° C. for 1 hour. This heat treatment is also calledoxidation treatment which oxidizes the metal thin film 470 partly orentirely. In this embodiment, the metal thin film 470 becomes an indiumoxide film, a first oxide semiconductor layer 471. Through the abovesteps, the first thin film transistor 430 including a stack of the firstoxide semiconductor layer 471 and a second oxide semiconductor layer 405can be manufactured in the driver circuit. FIG. 1C is a cross-sectionalview of this stage. Further, through this heat treatment, rearrangementat the atomic level occurs in the In—Ga—Zn—O-based non-single-crystalfilm. Note that there is no particular limitation on the timing of theheat treatment and the heat treatment may be performed anytime afterformation of the second In—Ga—Zn—O-based non-single-crystal film, andfor example, the heat treatment may be performed after formation of apixel electrode.

Note that although the thickness of the metal thin film 470 before theheat treatment and the thickness of the first oxide semiconductor layer,which is the oxidized metal thin film 470, after the heat treatment aresubstantially the same in FIG. 1C, the thickness of the first oxidesemiconductor layer 471 may be larger than that of the metal thin filmbefore the heat treatment due to oxidation. Further, the thickness ofthe overlaying second oxide semiconductor layer 405 may be smaller thanthat before the heat treatment due to an increase in thickness of thefirst oxide semiconductor layer 471.

Next, the resist mask is removed, and a protective insulating layer 412is formed to cover the first thin film transistor 430 and the secondthin film transistor 170. For the protective insulating layer 412, asingle layer or a stacked layer of a silicon nitride film, a siliconoxide film, a silicon oxynitride film, an aluminum oxide film, analuminum nitride film, an aluminum oxynitride film, a tantalum oxidefilm, and/or the like which is formed by a sputtering method or the likecan be used. The protective insulating layer 412 has a thickness of 50nm to 400 nm.

Then, a photolithography step is performed to form a resist mask, andthe protective insulating layer 412 is etched to form a contact holewhich reaches the source or drain electrode layer 105 b.

Next, the resist mask is removed. A conductive film is formed, then, aphotolithography step is performed to form a resist mask and theconductive film is etched to form a first electrode 472 which iselectrically connected to the source or drain electrode layer 105 b.Then, an insulating layer 473 which serves as a partition wall forisolating first electrodes of neighboring pixels is formed. Then, anorganic compound layer 475 including a light-emitting layer is formedover the first electrode 472 and then a second electrode 474 is formedthereover. A light-emitting element at least includes a first electrode472, the organic compound layer 475 including a light-emitting layer,and the second electrode 474. FIG. 1D is a cross-sectional view of thisstage.

Note that this embodiment gives an example of a light-emitting displaydevice including a light-emitting element without particular limitation.A liquid crystal display device or an electronic paper can bemanufactured.

By using the thin film transistor including a stack of oxidesemiconductor layers for a peripheral circuit such as a gate line drivercircuit or a source line driver circuit in a liquid crystal displaydevice, a light-emitting display device, an electronic paper, or thelike, an increase in driving speed and a reduction in power consumptioncan be achieved. Further, both the pixel portion and the driver circuitcan be provided over the same substrate without greatly increasing thenumber of steps. By providing various circuits in addition to the pixelportion over the same substrate, manufacturing cost of the displaydevice can be reduced.

Embodiment 2

In this embodiment, an example in which an inverter circuit is formedusing two n-channel thin film transistors is described below. Thisinverter circuit is used as part of a driver circuit. Note that thefirst thin film transistor 430 in Embodiment 1 and the first thin filmtransistor 430 in FIG. 2A are the same; accordingly, a detaileddescription is omitted.

In this embodiment, a novel structure which includes a driver circuitcapable of high-speed operation over a substrate having an insulatingsurface is provided. In addition, a novel manufacturing method of thestructure is also provided. Further, a novel method for manufacturing afirst thin film transistor in which a stack of oxide semiconductorlayers is used as a channel formation region and a second thin filmtransistor in which a single layer of an oxide semiconductor layer isused as a channel formation region over one substrate is also provided.

FIG. 2A illustrates a cross-sectional structure of the inverter circuitof the driver circuit. In FIG. 2A, the first gate electrode 401 and asecond gate electrode 402 are provided over the substrate 400.

Additionally, the gate insulating layer 403 covering the first gateelectrode 401 and the second gate electrode 402 is formed. A stack ofthe first oxide semiconductor layer 471 and the second oxidesemiconductor layer 405 is provided over the gate insulating layer 403and in a position overlapping with the first gate electrode 401. A stackof a third oxide semiconductor layer 451 and a fourth oxidesemiconductor layer 407 is provided over the gate insulating layer 403and in a position overlapping with the second gate electrode 402.

Further, over the second oxide semiconductor layer 405 and the fourthoxide semiconductor layer 407, the first wiring 409, the second wiring410, and a third wiring 411 are provided. The second wiring 410 isdirectly connected to the second gate electrode 402 through a contacthole 404 formed in the gate insulating layer 403. Note that there is noparticular limitation on the timing of formation of the contact hole 404as long as it is performed after formation of the gate insulating layer403. For example, the contact hole 404 may be formed after etching of anoxide semiconductor film which is performed later or even after a heattreatment which is performed after the etching. Note that the n⁺-typelayer 406 a is provided between the second oxide semiconductor layer 405and the first wiring 409 while the n⁺-type layer 406 b is providedbetween the second oxide semiconductor layer 405 and the second wiring410. Further, an n⁺-type layer 408 a is provided between the fourthoxide semiconductor layer 407 and the second wiring 410 while an n⁺-typelayer 408 b is provided between the fourth oxide semiconductor layer 407and the third wiring 411.

The first thin film transistor 430 includes the first gate electrode 401and a stack of the first oxide semiconductor layer 471 and the secondoxide semiconductor layer 405 in a position overlapping with the firstgate electrode 401 with the gate insulating layer 403 interposedtherebetween, and the first wiring 409 is a power supply line at aground potential (a ground power supply line). This power supply line ata ground potential may be a power supply line to which a negativevoltage VDL is applied (a negative power supply line).

In addition, a second thin film transistor 431 includes the second gateelectrode 402 and a stack of the third oxide semiconductor layer 451 andthe fourth oxide semiconductor layer 407 in a position overlapping withthe second gate electrode 402 with the gate insulating layer 403interposed therebetween, and the third wiring 411 is a power supply lineto which a positive voltage VDD is applied (a positive power supplyline).

As illustrated in FIG. 2A, the second wiring 410 which is electricallyconnected to both the second oxide semiconductor layer 405 and thefourth oxide semiconductor layer 407 is directly connected to the secondgate electrode 402 of the second thin film transistor 431 through thecontact hole 404 formed in the gate insulating layer 403. By the directconnection between the second wiring 410 and the second gate electrode402, favorable contact can be obtained, which leads to a reduction incontact resistance. In comparison with the case where the second gateelectrode 402 and the second wiring 410 are connected to each other withanother conductive film, e.g., a transparent conductive film, areduction in the number of contact holes and a reduction in an areaoccupied due to the reduction in the number of contact holes can beachieved.

Further, FIG. 2C is a top view of the inverter circuit of the drivercircuit. In FIG. 2C, a cross section taken along the chain line Z1-Z2corresponds to FIG. 2A.

Further, FIG. 2B illustrates an equivalent circuit of an EDMOS circuit.The circuit connection illustrated in FIGS. 2A and 2C is illustrated inFIG. 2B. An example in which the first thin film transistor 430 is ann-channel enhancement transistor and the second thin film transistor 431is an n-channel depletion transistor is illustrated.

Although the example of the EDMOS circuit is described in FIGS. 2A to2C, an EEMOS circuit may alternatively be used. An equivalent circuit ofthe EEMOS circuit is illustrated in FIG. 3. In the equivalent circuitillustrated in FIG. 3, a driver circuit can be formed in either case: acase where a first thin film transistor 460 and a second thin filmtransistor 461 are both n-channel enhancement transistors, or a casewhere the first thin film transistor 460 is an n-channel enhancementtransistor and the second thin film transistor 461, which is the othertransistor, is an n-channel depletion transistor.

It can be said that it is preferable to use the circuit configurationillustrated in FIG. 3 in which n-channel enhancement transistors of thesame type are combined for the driver circuit. This is because in such acase, a transistor used for the pixel portion is also formed of ann-channel enhancement transistor which is the same type as that used forthe driver circuit, and therefore the number of manufacturing steps isnot increased.

Further, in Embodiment 1, an example in which after the metal thin filmand the oxide semiconductor layer are stacked, the metal thin film isoxidized to form a stack of the first oxide semiconductor layer and thesecond oxide semiconductor layer is given without particular limitation.The following manufacturing process may also be employed, for example:after the first oxide semiconductor layer is formed over the entiresurface, the first oxide semiconductor layer in the driver circuit iscovered with a resist and the first oxide semiconductor layer in thepixel portion is etched away; then, the resist is removed; and then, thesecond oxide semiconductor layer is formed over the entire surface. Withsuch a manufacturing process, it is possible to form, over the samesubstrate, a pixel portion in which a thin film transistor including asingle layer of an oxide semiconductor layer is provided and a drivercircuit in which a thin film transistor including a stack of oxidesemiconductor layers is provided.

Note that this embodiment mode can be arbitrarily combined withEmbodiment 1.

Embodiment 3

A display device which is an example of a semiconductor device isdescribed below. In that display device, at least part of a drivercircuit and a thin film transistor in a pixel portion are formed overone substrate.

The thin film transistor in the pixel portion is formed according toEmbodiment 1. The thin film transistor is an n-channel TFT; therefore,part of a driver circuit which can be formed using n-channel TFTs isformed over the same substrate as the thin film transistor in the pixelportion.

FIG. 4A illustrates an example of a block diagram of an active matrixliquid crystal display device which is an example of a semiconductordevice. The display device illustrated in FIG. 4A includes, over asubstrate 5300, a pixel portion 5301 including a plurality of pixelseach provided with a display element, a scan line driver circuit 5302that selects a pixel, and a signal line driver circuit 5303 thatcontrols a video signal input to the selected pixel.

The thin film transistor described in Embodiment 1 is an n-channel TFT.A signal line driver circuit including n-channel TFTs is described withreference to FIG. 5.

The signal line driver circuit of FIG. 5 includes a driver IC 5601,switch groups 5602_1 to 5602_M, a first wiring 5611, a second wiring5612, a third wiring 5613, and wirings 5621_1 to 5621_M. Each of theswitch groups 5602_1 to 5602_M includes a first thin film transistor5603 a, a second thin film transistor 5603 b, and a third thin filmtransistor 5603 c.

The pixel portion 5301 is connected to the signal line driver circuit5303 with a plurality of signal lines S1 to Sm (not shown) extending ina column direction from the signal line driver circuit 5303 andconnected to the scan line driver circuit 5302 with a plurality of scanlines G1 to Gn (not shown) extending in a row direction from the scanline driver circuit 5302. The pixel portion 5301 includes a plurality ofpixels (not shown) arranged in a matrix corresponding to the signallines S1 to Sm and the scan lines G1 to Gn. In addition, each of thepixels is connected to a signal line Sj (any one of the signal lines S1to Sm) and a scan line Gi (any one of the scan lines G1 to Gn).

The driver IC 5601 is connected to the first wiring 5611, the secondwiring 5612, the third wiring 5613, and the wirings 5621_1 to 5621_M.Each of the switch groups 5602_1 to 5602_M is connected to the firstwiring 5611, the second wiring 5612, and the third wiring 5613. Inaddition, the switch groups 5602_1 to 5602_M are connected to thewirings 5621_1 to 5621_M, respectively. Each of the wirings 5621_1 to5621_M is connected to three signal lines through the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c. For example, the wiring 5621_J of the J-thcolumn (one of the wirings 5621_1 to 5621_M) is connected to a signalline Sj−1, a signal line Sj, and a signal line Sj+1 through the firstthin film transistor 5603 a, the second thin film transistor 5603 b, andthe third thin film transistor 5603 c of the switch group 5602_J,respectively.

Note that a signal is input to each of the first wiring 5611, the secondwiring 5612, and the third wiring 5613.

Note that the driver IC 5601 is preferably formed over a single-crystalsemiconductor substrate. The switch groups 5602_1 to 5602_M arepreferably formed over the same substrate as the pixel portion.Therefore, the driver IC 5601 is preferably connected to the switchgroups 5602_1 to 5602_M through an FPC or the like.

Next, operation of the signal line driver circuit of FIG. 5 is describedwith reference to a timing diagram of FIG. 6. FIG. 6 illustrates thetiming diagram where a scan line Gi in the i-th row is selected. Aselection period of the scan line Gi in the i-th row is divided into afirst sub-selection period T1, a second sub-selection period T2, and athird sub-selection period T3. In addition, the signal line drivercircuit of FIG. 5 operates as shown in FIG. 6 when a scan line inanother row is selected.

Note that the timing diagram of FIG. 6 shows the case where the wiring5621_J in the J-th column is connected to the signal line Sj−1, thesignal line Sj, and the signal line Sj+1 through the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c, respectively.

The timing diagram of FIG. 6 shows timing at which the scan line Gi inthe i-th row is selected, timing 5703 a at which the first thin filmtransistor 5603 a is turned on/off, timing 5703 b at which the secondthin film transistor 5603 b is turned on/off, timing 5703 c at which thethird thin film transistor 5603 c is turned on/off, and a signal 5721_Jinput to the wiring 5621_J in the J-th column.

In the first sub-selection period T1, the second sub-selection periodT2, and the third sub-selection period T3, different video signals areinput to the wirings 5621_1 to 5621_M. For example, a video signal inputto the wiring 5621_J in the first sub-selection period T1 is input tothe signal line Sj−1, a video signal input to the wiring 5621_J in thesecond sub-selection period T2 is input to the signal line Sj, and avideo signal input to the wiring 5621_J in the third sub-selectionperiod T3 is input to the signal line Sj+1. The video signals input tothe wiring 5621_J in the first sub-selection period T1, the secondsub-selection period T2, and the third sub-selection period T3 aredenoted by Data_j−1, Data_j, and Dataj+1, respectively.

As shown in FIG. 6, in the first sub-selection period T1, the first thinfilm transistor 5603 a is on, and the second thin film transistor 5603 band the third thin film transistor 5603 c are off. At this time,Data_j−1 input to the wiring 5621_J is input to the signal line Sj−1 viathe first thin film transistor 5603 a. In the second sub-selectionperiod T2, the second thin film transistor 5603 b is on, and the firstthin film transistor 5603 a and the third thin film transistor 5603 care off. At this time, Data_J input to the wiring 5621_J is input to thesignal line Sj via the second thin film transistor 5603 b. In the thirdsub-selection period T3, the third thin film transistor 5603 c is on,and the first thin film transistor 5603 a and the second thin filmtransistor 5603 b are off. At this time, Data_j+1 input to the wiring5621_J is input to the signal line Sj+1 via the third thin filmtransistor 5603 c.

As described above, in the signal line driver circuit of FIG. 5, onegate selection period is divided into three; thus, video signals can beinput to three signal lines from one wiring 5621 in one gate selectionperiod. Therefore, in the signal line driver circuit of FIG. 5, thenumber of connections between the substrate provided with the driver IC5601 and the substrate provided with the pixel portion can be reduced toapproximately one third of the number of signal lines. When the numberof connections is reduced to approximately one third of the number ofsignal lines, the reliability, yield, and the like of the signal linedriver circuit of FIG. 5 can be improved.

Note that there is no particular limitation on the arrangement, number,driving method, and the like of the thin film transistors, as long asone gate selection period is divided into a plurality of sub-selectionperiods and video signals are input to a plurality of signal lines fromone wiring in the respective sub-selection periods as shown in FIG. 5.

For example, when video signals are input to three or more signal linesfrom one wiring in the respective sub-selection periods, it is onlynecessary to add a thin film transistor and a wiring for controlling thethin film transistor. Note that when one gate selection period isdivided into four or more sub-selection periods, each sub-selectionperiod becomes short. Therefore, one gate selection period is preferablydivided into two or three sub-selection periods.

As another example, as shown in a timing diagram of FIG. 7, oneselection period may be divided into a precharge period Tp, the firstsub-selection period T1, the second sub-selection period T2, and thethird sub-selection period T3. The timing diagram of FIG. 7 shows timingat which the scan line Gi in the i-th row is selected, timing 5803 a atwhich the first thin film transistor 5603 a is turned on/off, timing5803 b at which the second thin film transistor 5603 b is turned on/off,timing 5803 c at which the third thin film transistor 5603 c is turnedon/off, and a signal 5821_J input to the wiring 5621_J in the J-thcolumn. As shown in FIG. 7, the first thin film transistor 5603 a, thesecond thin film transistor 5603 b, and the third thin film transistor5603 c are on in the precharge period Tp. At this time, a prechargevoltage Vp input to the wiring 5621_J is input to the signal line Sj−1,the signal line Sj, and the signal line Sj+1 through the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c, respectively. In the first sub-selectionperiod T1, the first thin film transistor 5603 a is on, and the secondthin film transistor 5603 b and the third thin film transistor 5603 care off. At this time, Data_j−1 input to the wiring 5621_J is input tothe signal line Sj−1 through the first thin film transistor 5603 a. Inthe second sub-selection period T2, the second thin film transistor 5603b is on, and the first thin film transistor 5603 a and the third thinfilm transistor 5603 c are off. At this time, Data_j input to the wiring5621_J is input to the signal line Sj through the second thin filmtransistor 5603 b. In the third sub-selection period T3, the third thinfilm transistor 5603 c is on, and the first thin film transistor 5603 aand the second thin film transistor 5603 b are off. At this time,Data_j+1 input to the wiring 5621_J is input to the signal line Sj+1through the third thin film transistor 5603 c.

As described above, in the signal line driver circuit of FIG. 5 to whichthe timing diagram of FIG. 7 is applied, the signal line can beprecharged by providing the precharge period before the sub-selectionperiods. Thus, a video signal can be written to a pixel with high speed.Note that portions in FIG. 7 which are similar to those in FIG. 6 aredenoted by the same reference numerals, and detailed description of thesame portions or portions having similar functions is omitted.

Further, a constitution of the scan line driver circuit is described.The scan line driver circuit includes a shift register and a buffer.Also, the scan line driver circuit may include a level shifter in somecases. In the scan line driver circuit, when a clock signal (CLK) and astart pulse signal (SP) are input to the shift register, a selectionsignal is produced. The generated selection signal is buffered andamplified by the buffer, and the resulting signal is supplied to acorresponding scan line. Gate electrodes of transistors in pixels in oneline are connected to the scan line. Further, since the transistors inthe pixels in one line have to be turned on at the same time, a bufferwhich can feed a large amount of current is used.

An example of a shift register used as part of the scan line drivercircuit is described with reference to FIG. 8 and FIG. 9.

FIG. 8 illustrates a circuit configuration of the shift register. Theshift register shown in FIG. 8 includes a plurality of flip-flops,flip-flops 5701_1 to 5701_n. The shift register operates by input of afirst clock signal, a second clock signal, a start pulse signal, and areset signal.

Connection relationships of the shift register of FIG. 8 are described.In the flip-flop 5701_i (one of the flip-flops 5701_1 to 5701_n) of thei-th stage in the shift register of FIG. 8, a first wiring 5501 shown inFIG. 9 is connected to a seventh wiring 5717_1−1, a second wiring 5502shown in FIG. 9 is connected to a seventh wiring 5717_1+1, a thirdwiring 5503 shown in FIG. 9 is connected to a seventh wiring 5717_i, anda sixth wiring 5506 shown in FIG. 9 is connected to a fifth wiring 5715.

Further, a fourth wiring 5504 shown in FIG. 9 is connected to a secondwiring 5712 in flip-flops of odd-numbered stages, and is connected to athird wiring 5713 in flip-flops of even-numbered stages. A fifth wiring5505 shown in FIG. 9 is connected to a fourth wiring 5714.

Note that the first wiring 5501 shown in FIG. 9 of the flip-flop 5701_1of a first stage is connected to a first wiring 5711, and the secondwiring 5502 shown in FIG. 9 of the flip-flop 5701_n of an n-th stage isconnected to a sixth wiring 5716.

Note that the first wiring 5711, the second wiring 5712, the thirdwiring 5713, and the sixth wiring 5716 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fourth wiring 5714 and the fifth wiring5715 may be referred to as a first power supply line and a second powersupply line, respectively.

FIG. 9 illustrates the detail of the flip-flop shown in FIG. 8. Aflip-flop shown in FIG. 9 includes a first thin film transistor 5571, asecond thin film transistor 5572, a third thin film transistor 5573, afourth thin film transistor 5574, a fifth thin film transistor 5575, asixth thin film transistor 5576, a seventh thin film transistor 5577,and an eighth thin film transistor 5578. Note that the first thin filmtransistor 5571, the second thin film transistor 5572, the third thinfilm transistor 5573, the fourth thin film transistor 5574, the fifththin film transistor 5575, the sixth thin film transistor 5576, theseventh thin film transistor 5577, and the eighth thin film transistor5578 are n-channel transistors and are turned on when the gate-sourcevoltage (V_(gs)) exceeds the threshold voltage (V_(th)).

In FIG. 9, a gate electrode of the third thin film transistor 5573 iselectrically connected to the power supply line. Further, it can be saidthat a circuit in which the third thin film transistor 5573 is connectedto the fourth thin film transistor 5574 (a circuit surrounded by thechain line in FIG. 9) corresponds to a circuit having the structureillustrated in FIG. 2A. Although an example in which all the thin filmtransistors are n-channel enhancement transistors is described here,there is no particular limitation to this example. For example, thedriver circuit can be driven even with the use of an n-channel depletiontransistor as the third thin film transistor 5573.

Now, a connection structure of the flip-flop shown in FIG. 9 isdescribed below.

A first electrode (one of a source electrode or a drain electrode) ofthe first thin film transistor 5571 is connected to the fourth wiring5504, and a second electrode (the other of the source electrode or thedrain electrode) of the first thin film transistor 5571 is connected tothe third wiring 5503.

A first electrode of the second thin film transistor 5572 is connectedto the sixth wiring 5506. A second electrode of the second thin filmtransistor 5572 is connected to the third wiring 5503.

A first electrode of the third thin film transistor 5573 is connected tothe fifth wiring 5505. A second electrode of the third thin filmtransistor 5573 is connected to a gate electrode of the second thin filmtransistor 5572. A gate electrode of the third thin film transistor 5573is connected to the fifth wiring 5505.

A first electrode of the fourth thin film transistor 5574 is connectedto the sixth wiring 5506. A second electrode of the fourth thin filmtransistor 5574 is connected to the gate electrode of the second thinfilm transistor 5572. A gate electrode of the fourth thin filmtransistor 5574 is connected to a gate electrode of the first thin filmtransistor 5571.

A first electrode of the fifth thin film transistor 5575 is connected tothe fifth wiring 5505. A second electrode of the fifth thin filmtransistor 5575 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the fifth thin film transistor5575 is connected to the first wiring 5501.

A first electrode of the sixth thin film transistor 5576 is connected tothe sixth wiring 5506. A second electrode of the sixth thin filmtransistor 5576 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the sixth thin film transistor5576 is connected to the gate electrode of the second thin filmtransistor 5572.

A first electrode of the seventh thin film transistor 5577 is connectedto the sixth wiring 5506. A second electrode of the seventh thin filmtransistor 5577 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the seventh thin filmtransistor 5577 is connected to the second wiring 5502. A firstelectrode of the eighth thin film transistor 5578 is connected to thesixth wiring 5506. A second electrode of the eighth thin film transistor5578 is connected to the gate electrode of the second thin filmtransistor 5572. A gate electrode of the eighth thin film transistor5578 is connected to the first wiring 5501.

Note that the point at which the gate electrode of the first thin filmtransistor 5571, the gate electrode of the fourth thin film transistor5574, the second electrode of the fifth thin film transistor 5575, thesecond electrode of the sixth thin film transistor 5576, and the secondelectrode of the seventh thin film transistor 5577 are connected isreferred to as a node 5543. The point at which the gate electrode of thesecond thin film transistor 5572, the second electrode of the third thinfilm transistor 5573, the second electrode of the fourth thin filmtransistor 5574, the gate electrode of the sixth thin film transistor5576, and the second electrode of the eighth thin film transistor 5578are connected is referred to as a node 5544.

The first wiring 5501, the second wiring 5502, the third wiring 5503,and the fourth wiring 5504 may be referred to as a first signal line, asecond signal line, a third signal line, and a fourth signal line,respectively. The fifth wiring 5505 and the sixth wiring 5506 may bereferred to as a first power supply line and a second power supply line,respectively.

In addition, the signal line driver circuit and the scan line drivercircuit can be formed using only the n-channel TFTs described inEmbodiment 2. The n-channel TFT described in Embodiment 2 has a highmobility, and thus a driving frequency of a driver circuit can beincreased. For example, a scan line driver circuit using the n-channelTFTs described in Embodiment 2 can operate at high speed, and thus aframe frequency can be increased and black insertion can be realized.

In addition, when the channel width of the transistor in the scan linedriver circuit is increased or a plurality of scan line driver circuitsare provided, for example, higher frame frequency can be realized. Whena plurality of scan line driver circuits are provided, a scan linedriver circuit for driving even-numbered scan lines is provided on oneside and a scan line driver circuit for driving odd-numbered scan linesis provided on the opposite side; thus, an increase in frame frequencycan be realized. Furthermore, the use of the plurality of scan linedriver circuits for output of signals to the same scan line isadvantageous in increasing the size of a display device.

In the case of manufacturing an active matrix light-emitting displaydevice, which is an example of a semiconductor device, a plurality ofscan line driver circuits are preferably provided because a plurality ofthin film transistors are arranged in at least one pixel. An example ofa block diagram of an active matrix light-emitting display device isillustrated in FIG. 4B.

The light-emitting display device illustrated in FIG. 4B includes, overa substrate 5400, a pixel portion 5401 including a plurality of pixelseach provided with a display element, a first scan line driver circuit5402 and a second scan line driver circuit 5404 that select a pixel, anda signal line driver circuit 5403 that controls a video signal input tothe selected pixel.

In the case of inputting a digital video signal to the pixel of thelight-emitting display device of FIG. 4B, the pixel is put in alight-emitting state or non-light-emitting state by switching on/off ofthe transistor. Thus, grayscale can be displayed using an area ratiograyscale method or a time ratio grayscale method. An area ratiograyscale method refers to a driving method by which one pixel isdivided into a plurality of subpixels and the respective subpixels aredriven separately based on video signals so that grayscale is displayed.Further, a time ratio grayscale method refers to a driving method bywhich a period during which a pixel is in a light-emitting state iscontrolled so that grayscale is displayed.

Since the response time of light-emitting elements is shorter than thatof liquid crystal elements or the like, the light-emitting elements aresuitable for a time ratio grayscale method. Specifically, in the case ofdisplaying by a time grayscale method, one frame period is divided intoa plurality of subframe periods. Then, in accordance with video signals,the light-emitting element in the pixel is put in a light-emitting stateor a non-light-emitting state in each subframe period. By dividing aframe period into a plurality of subframe periods, the total length oftime in which pixels actually emit light in one frame period can becontrolled with video signals to display grayscale.

Note that in an example of the light-emitting display device of FIG. 4B,in the case where one pixel includes two switching TFTs, a signal whichis input to a first scan line which is a gate wiring of one of theswitching TFTs is generated in the first scan line driver circuit 5402and a signal which is input to a second scan line which is a gate wiringof the other switching TFT is generated in the second scan line drivercircuit 5404. However, both of the signals which are input to the firstscan line and the second scan line may be generated in one scan linedriver circuit. In addition, for example, there is a possibility that aplurality of scan lines used for controlling the operation of theswitching elements be provided in each pixel depending on the number ofswitching TFTs included in one pixel. In this case, the signals whichare input to the scan lines may all be generated in one scan line drivercircuit or may be generated in a plurality of scan line driver circuits.

Also in the light-emitting display device, part of the driver circuitwhich can be formed using the n-channel TFTs can be provided over onesubstrate together with the thin film transistors of the pixel portion.Moreover, the signal line driver circuit and the scan line drivercircuit can be manufactured using only the n-channel TFTs described inEmbodiment 2.

The above driver circuit may be used for not only a liquid crystaldisplay device or a light-emitting display device but also an electronicpaper in which electronic ink is driven by utilizing an elementelectrically connected to a switching element. The electronic paper isalso called an electrophoretic display device (electrophoretic display)and has advantages in that it has the same level of readability asregular paper, it has less power consumption than other display devices,and it can be made thin and lightweight.

There are a variety of modes of electrophoretic displays. Theelectrophoretic display is a device in which a plurality ofmicrocapsules each including first particles having positive charge andsecond particles having negative charge are dispersed in a solvent or asolute, and an electrical field is applied to the microcapsules so thatthe particles in the microcapsules move in opposite directions from eachother, and only a color of the particles gathered on one side isdisplayed. Note that the first particles or the second particles includea colorant, and does not move when there is not electric field. Also, acolor of the first particles is different from a color of the secondparticles (the particles may also be colorless).

Thus, the electrophoretic display utilizes a so-called dielectrophoreticeffect, in which a substance with high dielectric constant moves to aregion with high electric field. The electrophoretic display does notrequire a polarizing plate and a counter substrate, which are necessaryfor a liquid crystal display device, so that the thickness and weightthereof are about half.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. Electronic ink can be printed on asurface of glass, plastic, fabric, paper, or the like. Color display isalso possible with the use of a color filter or particles including acoloring matter.

In addition, an active matrix display device can be completed byproviding, as appropriate, a plurality of the microcapsules over anactive matrix substrate so as to be interposed between two electrodes,and can perform display by application of electric field to themicrocapsules. For example, the active matrix substrate obtained usingthe thin film transistors described in Embodiment 1 or 2 can be used.

Note that the first particles and the second particles in themicrocapsules may be formed from any one of a conductive material, aninsulating material, a semiconductor material, a magnetic material, aliquid crystal material, a ferroelectric material, an electroluminescentmaterial, an electrochromic material, and a magnetophoretic material ora composite material thereof.

Through the above process, a highly reliable display device as asemiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 4

This embodiment describes an example of a light-emitting display deviceas a semiconductor device. As a display element of the display device,here, a light-emitting element utilizing electroluminescence isdescribed. Light-emitting elements utilizing electroluminescence areclassified according to whether a light emitting material is an organiccompound or an inorganic compound. The former is referred to as anorganic EL element and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and thus current flows. Then, those carriers (i.e., electrons and holes)are recombined, and thus, the light-emitting organic compound isexcited. When the light-emitting organic compound returns to a groundstate from the excited state, light is emitted. Owing to such amechanism, this light emitting element is referred to as acurrent-excitation light emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion type inorganic EL element and a thin-filmtype inorganic EL element. A dispersion type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film type inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that description ismade here using an organic EL element as a light-emitting element.

FIG. 10 illustrates an example of a pixel structure to which digitaltime grayscale driving can be applied, as an example of a semiconductordevice.

A structure and operation of a pixel to which digital time grayscaledriving can be applied are described. In this example, one pixelincludes two n-channel transistors in each of which an oxidesemiconductor layer (typically, an In—Ga—Zn—O-based non-single-crystalfilm) in a channel formation region.

A pixel 6400 includes a switching transistor 6401, a driver transistor6402, a light-emitting element 6404, and a capacitor 6403. A gate of theswitching transistor 6401 is connected to a scan line 6406, a firstelectrode (one of a source electrode and a drain electrode) of theswitching transistor 6401 is connected to a signal line 6405, and asecond electrode (the other of the source electrode and the drainelectrode) of the switching transistor 6401 is connected to a gate ofthe driver transistor 6402. The gate of the driver transistor 6402 isconnected to a power supply line 6407 through the capacitor 6403, afirst electrode of the driver transistor 6402 is connected to the powersupply line 6407, and a second electrode of the driver transistor 6402is connected to a first electrode (pixel electrode) of thelight-emitting element 6404. A second electrode of the light-emittingelement 6404 corresponds to a common electrode 6408. The commonelectrode 6408 is electrically connected to a common potential lineprovided over the same substrate, and the connection portion may be usedas a common connection portion.

Note that the second electrode (common electrode 6408) of thelight-emitting element 6404 is set to a low power supply potential. Thelow power supply potential is a potential smaller than a high powersupply potential when the high power supply potential set to the powersupply line 6407 is a reference. As the low power supply potential, GND,0 V, or the like may be employed, for example. In order to make thelight-emitting element 6404 emit light by applying a potentialdifference between the high power supply potential and the low powersupply potential to the light-emitting element 6404 so that currentflows through the light-emitting element 6404, each of the potentials isset so that the potential difference between the high power supplypotential and the low power supply potential is equal to or higher thanthe forward threshold voltage of the light-emitting element 6404.

Gate capacitance of the driver transistor 6402 may be used as asubstitute for the capacitor 6403, so that the capacitor 6403 can beomitted. The gate capacitance of the driver transistor 6402 may beformed between the channel region and the gate electrode.

In the case of a voltage-input voltage driving method, a video signal isinput to the gate of the driver transistor 6402 so that the drivertransistor 6402 is either completely turned on or completely turned off.That is, the driver transistor 6402 operates in a linear region. Sincethe driver transistor 6402 operates in a linear region, voltage higherthan the voltage of the power supply line 6407 is applied to the gate ofthe driver transistor 6402. Note that voltage which is equal to orhigher than the sum of the voltage of the power supply line and the Vthof the driver transistor 6402 is applied to the signal line 6405.

In the case of performing analog grayscale driving instead of digitaltime grayscale driving, the same pixel structure as that in FIG. 10 canbe used by changing signal input.

In the case of performing analog grayscale driving, voltage equal to orhigher than the sum of the forward voltage of the light-emitting element6404 and the Vth of the driver transistor 6402 is applied to the gate ofthe driver transistor 6402. The forward voltage of the light-emittingelement 6404 indicates voltage at which a desired luminance is obtained,and includes at least a forward threshold voltage. By inputting a videosignal to allow the driver transistor 6402 to operate in a saturationregion, current can flow through the light-emitting element 6404. Inorder for the driver transistor 6402 to operate in a saturation region,the potential of the power supply line 6407 is set higher than the gatepotential of the driver transistor 6402. When an analog video signal isused, current can be fed to the light-emitting element 6404 inaccordance with the video signal and analog grayscale driving can beperformed.

Note that the pixel structure shown in FIG. 10 is not limited thereto.For example, a switch, a resistor, a capacitor, a transistor, a logiccircuit, or the like may be added to the pixel shown in FIG. 10.

Next, structures of a light-emitting element are described withreference to FIGS. 11A to 11C. A cross-sectional structure of a pixel isdescribed here by taking an n-channel driver TFT as an example. TFTs7001, 7011, and 7021 serving as driver TFTs used for semiconductordevices illustrated in FIGS. 11A to 11C can be formed by a methodsimilar to the method for forming the second thin film transistor 170described in Embodiment 1. The TFTs 7001, 7011, and 7021 each include anoxide semiconductor film as a semiconductor layer.

In order to extract light emitted from the light-emitting element, atleast one of an anode and a cathode is required to be transparent. Athin film transistor and a light-emitting element are formed over asubstrate. A light-emitting element can have a top-emission structure inwhich light is extracted through the surface opposite to the substrate;a bottom-emission structure in which light is extracted through thesurface of the substrate; or a dual-emission structure in which light isextracted through the surface opposite to the substrate and the surfaceof the substrate. The pixel structure can be applied to a light-emittingelement having any of these emission structures.

A light-emitting element with a top-emission structure is described withreference to FIG. 11A.

FIG. 11A is a cross-sectional view of a pixel in the case where the TFT7001 serving as a driver TFT is an n-channel TFT and light generated ina light-emitting element 7002 is emitted through an anode 7005. The TFT7001 includes an In—Sn—Zn—O-based oxide semiconductor to which siliconoxide is added as its semiconductor layer. If the In—Sn—Zn—O-based oxidesemiconductor contains an impurity such as silicon oxide,crystallization of the In—Sn—Zn—O-based oxide semiconductor orgeneration of microcrystal grains can be prevented even when theIn—Sn—Zn—O-based oxide semiconductor is subjected to heat treatment at300° C. to 600° C. In FIG. 11A, a cathode 7003 of the light-emittingelement 7002 is electrically connected to the TFT 7001 serving as adriver TFT, and a light-emitting layer 7004 and the anode 7005 arestacked in this order over the cathode 7003. The cathode 7003 can beformed using any of conductive materials which have a low work functionand a film of which reflects light. For example, Ca, Al, CaF, MgAg,AlLi, or the like is preferably used. The light-emitting layer 7004 maybe formed using a single layer or by stacking a plurality of layers.When the light-emitting layer 7004 is formed using a plurality oflayers, the light-emitting layer 7004 is formed by stacking anelectron-injecting layer, an electron-transporting layer, alight-emitting layer, a hole-transporting layer, and a hole-injectinglayer in this order over the cathode 7003. It is not necessary to formall of these layers. The anode 7005 is formed using a light-transmittingconductive film formed from a light-transmitting conductive materialsuch as indium oxide containing tungsten oxide, indium zinc oxidecontaining tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium tin oxide(hereinafter, referred to as ITO), indium zinc oxide, or indium tinoxide to which silicon oxide is added.

The light-emitting element 7002 corresponds to a region where thecathode 7003 and the anode 7005 sandwich the light-emitting layer 7004.In the pixel illustrated in FIG. 11A, light is emitted from thelight-emitting element 7002 to the anode 7005 side as indicated by anarrow.

Next, a light-emitting element having a bottom-emission structure isdescribed with reference to FIG. 11B. FIG. 11B is a cross-sectional viewof a pixel in the case where the driver TFT 7011 is an n-channel TFT,and light generated in a light-emitting element 7012 is emitted througha cathode 7013. The TFT 7001 includes an In—Al—Zn—O-based oxidesemiconductor to which silicon oxide is added as its semiconductorlayer. If the In—Al—Zn—O-based oxide semiconductor contains an impuritysuch as silicon oxide, crystallization of the In—Al—Zn—O-based oxidesemiconductor or generation of microcrystal grains can be prevented evenwhen the In—Al—Zn—O-based oxide semiconductor is subjected to heattreatment at 300° C. to 600° C. In FIG. 11B, the cathode 7013 of thelight-emitting element 7012 is formed over a conductive film 7017 havinga light-transmitting property which is electrically connected to thedriver TFT 7011, and a light-emitting layer 7014 and an anode 7015 arestacked in this order over the cathode 7013. Note that a light-blockingfilm 7016 for reflecting or blocking light may be formed so as to coverthe anode 7015 when the anode 7015 has a light-transmitting property.For the cathode 7013, any of conductive materials which have a low workfunction can be used as in the case of FIG. 11A. Note that the cathode7013 is formed to have a thickness with which the cathode 7013 cantransmit light (preferably, approximately from 5 nm to 30 nm). Forexample, an aluminum film with a thickness of 20 nm can be used as thecathode 7013. The light-emitting layer 7014 may be formed of a singlelayer or by stacking a plurality of layers as in the case of FIG. 11A.The anode 7015 is not required to transmit light, but can be formedusing a light-transmitting conductive material as in the case of FIG.11A. For the light-blocking film 7016, metal or the like that reflectslight can be used; however, it is not limited to a metal film. Forexample, a resin or the like to which black pigment is added can beused.

The light-emitting element 7012 corresponds to a region where thecathode 7013 and the anode 7015 sandwich the light-emitting layer 7014.In the pixel illustrated in FIG. 11B, light is emitted from thelight-emitting element 7012 to pass through the cathode 7013 asindicated by an arrow.

Next, a light-emitting element having a dual-emission structure isdescribed with reference to FIG. 11C. In FIG. 11C, a cathode 7023 of alight-emitting element 7022 is formed over a conductive film 7027 havinga light-transmitting property which is electrically connected to thedriver TFT 7021, and a light-emitting layer 7024 and an anode 7025 arestacked in this order over the cathode 7023. The TFT 7001 includes aSn—Al—Zn—O-based oxide semiconductor to which silicon oxide is added asits semiconductor layer. If the Sn—Al—Zn—O-based oxide semiconductorcontains an impurity such as silicon oxide, crystallization of theSn—Al—Zn—O-based oxide semiconductor or generation of microcrystalgrains can be prevented even when the Sn—Al—Zn—O-based oxidesemiconductor is subjected to heat treatment at 300° C. to 600° C. As inthe case of FIG. 11A, the cathode 7023 can be formed of any ofconductive materials which have a low work function. Note that thecathode 7023 is formed to have a thickness with which the cathode 7023can transmit light. For example, an Al film having a thickness of 20 nmcan be used as the cathode 7023. The light-emitting layer 7024 may beformed using a single layer or by stacking a plurality of layers as inthe case of FIG. 11A. In a manner similar to FIG. 11A, the anode 7025can be formed using a light-transmitting conductive material.

The light-emitting element 7022 corresponds to a region where thecathode 7023, the light-emitting layer 7024, and the anode 7025 overlapwith each other. In the pixel illustrated in FIG. 11C, light is emittedfrom the light-emitting element 7022 to pass through both the anode 7025and the cathode 7023 as indicated by arrows.

Although an organic EL element is described here as a light-emittingelement, an inorganic EL element can alternatively be provided as alight-emitting element.

Note that this embodiment describes an example in which a thin filmtransistor (a driver TFT) which controls the driving of a light-emittingelement is electrically connected to the light-emitting element, but astructure may be employed in which a current control TFT is connectedbetween the driver TFT and the light-emitting element.

Next, the appearance and cross section of a light-emitting display panel(also referred to as a light-emitting panel) which is one mode of asemiconductor device will be described with reference to FIGS. 12A and12B. FIG. 12A is a top view of a panel in which a light-emitting elementand a thin film transistor over a first substrate are sealed with asealant between the first substrate and a second substrate. FIG. 12B isa cross-sectional view along H-I of FIG. 12A.

A sealant 4505 is provided so as to surround a pixel portion 4502,signal line driver circuits 4503 a and 4503 b, and scan line drivercircuits 4504 a and 4504 b, which are provided over a first substrate4501. In addition, a second substrate 4506 is provided over the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b. Accordingly, the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b are sealed together with afiller 4507, with the first substrate 4501, the sealant 4505, and thesecond substrate 4506. In this manner, it is preferable that thelight-emitting display panel be packaged (sealed) with a protective film(such as an attachment film or an ultraviolet curable resin film) or acover material with high air-tightness and little degasification so thatat least the pixel portion 4502 is not exposed to external air.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b which are formedover the first substrate 4501 each include a plurality of thin filmtransistors. A thin film transistor 4510 included in the pixel portion4502 and a thin film transistor 4509 included in the signal line drivercircuit 4503 a are illustrated as an example in FIG. 12B.

As the thin film transistor 4509, the first thin film transistordescribed in Embodiment 1 which includes a stack of oxide semiconductorlayers as its semiconductor layer is employed. As the thin filmtransistor 4510, the second thin film transistor described in Embodiment1 which includes a single layer of an In—Ga—Zn—O-basednon-single-crystal film is employed. In this embodiment, the thin filmtransistors 4509 and 4510 are n-channel thin film transistors.

Moreover, reference numeral 4511 denotes a light-emitting element. Afirst electrode layer 4517 which is a pixel electrode included in thelight-emitting element 4511 is electrically connected to a source ordrain electrode layer of the thin film transistor 4510. Note thatalthough the light-emitting element 4511 has a stacked structure of thefirst electrode layer 4517, an electroluminescent layer 4512, and asecond electrode layer 4513 in this embodiment, the structure of thelight-emitting element 4511 is not limited thereto. The structure of thelight-emitting element 4511 can be changed as appropriate depending on adirection in which light is extracted from the light-emitting element4511, or the like.

A partition wall 4520 is formed using an organic resin film, aninorganic insulating film, or organic polysiloxane. It is particularlypreferable that the partition wall 4520 be formed using a photosensitivematerial to have an opening portion on the first electrode layer 4517 sothat a sidewall of the opening portion is formed as an inclined surfacewith a continuous curvature.

The electroluminescent layer 4512 may be formed using a single layer ora plurality of layers stacked.

In order to prevent entry of oxygen, hydrogen, moisture, carbon dioxide,or the like into the light-emitting element 4511, a protective film maybe formed over the second electrode layer 4513 and the partition wall4520. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed.

In addition, a variety of signals and potentials are supplied from FPCs4518 a and 4518 b to the signal line driver circuits 4503 a and 4503 b,the scan line driver circuits 4504 a and 4504 b, or the pixel portion4502.

In this embodiment, a connecting terminal electrode 4515 is formed usingthe same conductive film as the first electrode layer 4517 included inthe light-emitting element 4511. A terminal electrode 4516 is formedusing the same conductive film as the source and drain electrode layersincluded in the thin film transistors 4509 and 4510.

The connecting terminal electrode 4515 is electrically connected to aterminal included in the FPC 4518 a through an anisotropic conductivefilm 4519.

The second substrate located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used as well as inert gas such as nitrogen or argon. Forexample, polyvinyl chloride (PVC), acrylic, polyimide, an epoxy resin, asilicone resin, polyvinyl butyral (PVB), or ethylene vinyl acetate (EVA)can be used. In this embodiment, nitrogen is used for the filler.

In addition, if needed, an optical film such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),and a color filter may be provided as appropriate on an emission surfaceof the light-emitting element. Further, the polarizing plate or thecircularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light isdiffused by depressions and projections of the surface so as to reducethe glare can be performed.

As the signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b, driver circuits formed by using asingle crystal semiconductor film or a polycrystalline semiconductorfilm over a substrate separately prepared may be mounted. In addition,only the signal line driver circuits or part thereof, or only the scanline driver circuits or part thereof may be separately formed and thenmounted. This embodiment is not limited to the structure shown in FIGS.12A and 12B.

Through the above steps, a highly reliable light-emitting device(display panel) as a semiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 5

In this embodiment, an example is described with reference to FIGS. 13Ato 13C in which the area of the top surface of the metal thin film isdifferent from that in Embodiment 1; in other words, end portions of themetal thin film are located away from end portions of the second oxidesemiconductor layer. Note that except for the shape of the metal thinfilm, this example is same as the example in FIGS. 1A to 1C and the samereference numerals designate the same parts.

First, as in Embodiment 1, the first gate electrode 401 and the secondgate electrode 101 are provided over the substrate 400 having aninsulating surface. Note that in formation of the first gate electrode401 and the second gate electrode 101, a capacitor wiring 108 in a pixelportion and a first terminal 121 in a terminal portion are also formed.

Then, the gate insulating layer 403 covering the first gate electrode401 and the second gate electrode 101 is formed.

Then, a metal thin film of indium, zinc, tin, molybdenum, tungsten, orthe like is formed over the gate insulating layer 403. Alternatively, analloy thin film or a stacked-layer film of any of those elements can beformed. The metal thin film is formed by a sputtering method, a vacuumvapor deposition method, or a coating method. Here, a zinc film isformed by a sputtering method to have a thickness of more than 0 nm andequal to or less than 10 nm, preferably, 3 nm to 5 nm inclusive.

Then, the metal thin film is removed as selected by a photolithographytechnique. In this etching step, a metal thin film 490 is formed to havean area smaller than an area of a patterned shape of an oxidesemiconductor layer to be formed later. Note that the metal thin film490 is formed in a position at least part of which overlaps with thefirst gate electrode 401 with the gate insulating layer 403 interposedtherebetween. When the metal thin film 490 is formed in such a manner,side surfaces of the metal thin film 490 are covered with the oxidesemiconductor layer. Therefore, even if the metal thin film is notsufficiently oxidized by subsequent heat treatment, a short circuitbetween the first wiring 409 and the second wiring 410 by the metal thinfilm can be prevented.

Then, an oxide semiconductor layer is formed to cover the top and sidesurfaces of the metal thin film 490. In this embodiment, a firstIn—Ga—Zn—O-based non-single-crystal film is formed by a sputteringmethod as the oxide semiconductor layer.

In the case where a first In—Ga—Zn—O-based oxide semiconductor layer isformed by a sputtering method, an oxide semiconductor target containingIn, Ga, and Zn may contain an insulating impurity. The impurity isinsulating oxide typified by silicon oxide, germanium oxide, aluminumoxide, or the like; insulating nitride typified by silicon nitride,aluminum nitride, or the like; insulating oxynitride such as siliconoxynitride or aluminum oxynitride; or the like. For example, SiO₂ ispreferably mixed into the oxide semiconductor target at 0.1 wt % to 10wt % inclusive, more preferably 1 wt % to 6 wt % inclusive.

Next, an oxide semiconductor film (in this embodiment, a secondIn—Ga—Zn—O-based non-single-crystal film) which has lower resistivitythan the first In—Ga—Zn—O-based non-single-crystal film is formed by asputtering method without exposure to air.

Next, a photolithography step is performed to form a resist mask, andthe first In—Ga—Zn—O-based non-single-crystal film and the secondIn—Ga—Zn—O-based non-single-crystal film are etched. Unnecessaryportions are removed by etching, thereby forming the oxide semiconductorfilms 485 a and 485 b, which are the first In—Ga—Zn—O-basednon-single-crystal films, and the oxide semiconductor films 486 a and486 b, which are the second In—Ga—Zn—O-based non-single-crystal films.FIG. 13A is a cross-sectional view of this stage. As illustrated in FIG.13A, the oxide semiconductor film 485 a, which is the firstIn—Ga—Zn—O-based non-single-crystal film, covers the top and sidesurfaces of the metal thin film 490 so that the metal thin film 490 isnot exposed.

Note that an example in which the second In—Ga—Zn—O-basednon-single-crystal film is provided is described without limitation inthis embodiment. The second In—Ga—Zn—O-based non-single-crystal film isnot necessarily provided.

Next, a photolithography step is performed to form a resist mask, andunnecessary portions are removed by etching, thereby forming a contacthole reaching a wiring or electrode layer which is formed from the samematerial as the gate electrode layer. This contact hole is provided fordirect contact with a conductive film formed later. For example, acontact hole is formed when a thin film transistor whose gate electrodelayer is in direct contact with the source or drain electrode layer isformed in a driver circuit portion, or when a terminal that iselectrically connected to a gate wiring of a terminal portion is formed.

Then, a conductive film is formed from a metal material by a sputteringmethod over the oxide semiconductor films 486 a and 486 b, which are thesecond In—Ga—Zn—O-based non-single-crystal films, and over the gateinsulating layer 403.

Then, a resist mask is formed by a photolithography step, andunnecessary portions are removed by etching. Thus, the source and drainelectrode layers 105 a and 105 b and the n⁺-type layers 104 a and 104 bserving as source and drain regions are formed in the pixel portionwhile the first and second wirings 409 and 410 serving as source anddrain electrode layers and the n⁺-type layers 406 a and 406 b serving assource and drain regions are formed in the driver circuit portion. Inthis etching step, an exposed region of the oxide semiconductor film ispartly etched to be the oxide semiconductor layer 103. Thus, a channelregion of the oxide semiconductor layer 103 between the n⁺-type layers104 a and 104 b has a small thickness. Through the above steps, thesecond thin film transistor 170 including the oxide semiconductor layer103 as its channel formation region can be formed in the pixel portion.In the photolithography step, a second terminal 122 that is made of thesame material as the source and drain electrode layers 105 a and 105 bis left in the terminal portion. Note that the second terminal 122 iselectrically connected to a source wiring (a source wiring including thesource and drain electrode layers 105 a and 105 b).

In addition, in the terminal portion, the connection electrode 120 isdirectly connected to the first terminal 121 of the terminal portionthrough a contact hole formed in the gate insulating film (see FIG. 15).Note that although not illustrated here, a source or drain wiring of thethin film transistor of the driver circuit is directly connected to thegate electrode through the same steps as the above steps.

Next, heat treatment is preferably performed at 200° C. to 600° C.,typically, 300° C. to 500° C. (the heat treatment may be annealing withlight)). Here, heat treatment is performed in air in a furnace at 350°C. for 1 hour. This heat treatment is also called oxidation treatmentwhich oxidizes the metal thin film 490 partly or entirely. In thisembodiment, the metal thin film 490 becomes a zinc oxide film havingconductivity, a first oxide semiconductor layer 491. Through the abovesteps, the first thin film transistor 420 including a stack of the firstoxide semiconductor layer 491 and the second oxide semiconductor layer405 can be manufactured in the driver circuit. FIG. 13B is across-sectional view of this stage. Further, through this heattreatment, rearrangement at the atomic level occurs in theIn—Ga—Zn—O-based non-single-crystal film. Note that there is noparticular limitation on the timing of the heat treatment and the heattreatment may be performed anytime after formation of the secondIn—Ga—Zn—O-based non-single-crystal film, and for example, the heattreatment may be performed after formation of a pixel electrode.

Next, the resist mask is removed, and the protective insulating layer412 is formed to cover the first thin film transistor 420 and the secondthin film transistor 170.

Then, a photolithography step is performed to form a resist mask, andthe protective insulating layer 412 is etched to form a contact holewhich reaches the source or drain electrode layer 105 b. In addition, bythe etching here, a contact hole which reaches the second terminal 122and a contact hole which reaches the connection electrode 120 areformed.

Then, after the resist mask is removed, a transparent conductive film isformed. The transparent conductive film is formed using indium oxide(In₂O₃), indium tin oxide (In₂O₃—SnO₂, abbreviated as ITO), or the likeby a sputtering method, a vacuum evaporation method, or the like.Etching treatment of such a material is performed with a hydrochloricacid based solution. However, because a residue tends to be generatedparticularly in etching of ITO, an alloy of indium oxide and zinc oxide(In₂O₃—ZnO) may be used in order to improve etching processability.

Next, a photolithography step is performed to form a resist mask, andunnecessary portions are removed by etching, thereby forming a pixelelectrode layer 110. Further, in this photolithography step, a storagecapacitor is formed with the capacitor wiring 108 and the pixelelectrode layer 110. The storage capacitor includes the gate insulatinglayer 403 and the protective insulating layer 412 in the capacitorportion as dielectrics. In addition, in this photolithography step, thefirst terminal and the second terminal are covered with the resist mask,and transparent conductive films 128 and 129 are left in the terminalportion. The transparent conductive films 128 and 129 serve aselectrodes or wirings that are used for connection with an FPC. Thetransparent conductive film 128 formed over the connection electrode 120that is directly connected to the first terminal 121 serves as aterminal electrode for connection which serves as an input terminal forthe gate wiring. The transparent conductive film 129 formed over thesecond terminal 122 serves as a terminal electrode for connection whichserves as an input terminal for the source wiring (see FIG. 15).

Note that an example in which the storage capacitor is formed from thecapacitor wiring 108 and the pixel electrode layer 110 by using the gateinsulating layer 403 and the protective insulating layer 412 as thedielectrics is described here. However, there is no particularlimitation and a structure may also be employed in which an electrodeformed of the same material as the source electrode or the drainelectrode is provided above the capacitor wiring and a storage capacitoris formed from the electrode, the capacitor wiring, and the gateinsulating layer 403 therebetween as a dielectric, and the electrode andthe pixel electrode are electrically connected.

Then, the resist mask is removed, and a cross-sectional view at thisstage is illustrated in FIG. 13C. Note that a top view of the secondthin film transistor 170 in the pixel portion at this stage correspondsto FIG. 14.

FIG. 15 is a cross-sectional view taken along the lines A1-A2 and B1-B2in FIG. 14. FIG. 15 illustrates a cross-sectional structure of thesecond thin film transistor 170 in the pixel portion, a cross-sectionalstructure of the capacitor portion in the pixel portion, and across-sectional structure of the terminal portion.

Further, FIGS. 16A and 16B are respectively a cross-sectional view of asource wiring terminal portion and a top view thereof. FIG. 16A is across-sectional view taken along the line D1-D2 in FIG. 16B. In FIG.16A, the transparent conductive film 155 formed over the protectiveinsulating film 154 is a connection terminal electrode which functionsas an input terminal. Furthermore, in FIG. 16A, in the terminal portion,an electrode 156 formed from the same material as the gate wiring islocated below and overlapped with a second terminal 150, which iselectrically connected to the source wiring, with a gate insulatinglayer 152 interposed therebetween. The electrode 156 is not electricallyconnected to the second terminal 150. When the electrode 156 is set to,for example, floating, GND, or 0 V such that the potential of theelectrode 156 is different from the potential of the second terminal150, a capacitor for preventing noise or static electricity can beformed. In addition, the second terminal 150 is electrically connectedto the transparent conductive film 155 with the protective insulatingfilm 154 interposed therebetween. Note that the protective insulatingfilm 154 is identical to the protective insulating layer 412.

A plurality of gate wirings, source wirings, and capacitor wirings areprovided depending on the pixel density. Also in the terminal portion,the first terminal at the same potential as the gate wiring, the secondterminal at the same potential as the source wiring, the third terminalat the same potential as the capacitor wiring, and the like are eacharranged in plurality. There is no particular limitation on the numberof terminals, and the number of terminals may be determined by apractitioner as appropriate.

In the above manner, a driver circuit including the first thin filmtransistor 420 in which oxide semiconductor layers are stacked, a pixelportion including the second thin film transistor 170 which is abottom-gate n-channel thin film transistor and the storage capacitor,and a terminal portion can be completed.

When an active matrix liquid crystal display device is manufactured, anactive matrix substrate and a counter substrate provided with a counterelectrode are fixed to each other with a liquid crystal layer interposedtherebetween. Note that a common electrode electrically connected to thecounter electrode on the counter substrate is provided over the activematrix substrate, and a terminal electrically connected to the commonelectrode is provided in the terminal portion. This terminal is providedso that the common electrode is fixed to a predetermined potential suchas GND or 0 V.

Further, this embodiment is not limited to a pixel structure in FIG. 14,and an example of a top view different from FIG. 14 is illustrated inFIG. 17. FIG. 17 illustrates an example in which a capacitor wiring isnot provided and a pixel electrode overlaps with a gate wiring of anadjacent pixel with a protective insulating film and a gate insulatinglayer interposed therebetween to form a storage capacitor. In this case,the capacitor wiring and the third terminal connected to the capacitorwiring can be omitted. Note that in FIG. 17, portions same as those inFIG. 14 are designated by the same reference numerals.

In an active matrix liquid crystal display device, pixel electrodesarranged in a matrix are driven to form a display pattern on a screen.Specifically, when voltage is applied between a selected pixel electrodeand a counter electrode corresponding to the selected pixel electrode, aliquid crystal layer provided between the pixel electrode and thecounter electrode is optically modulated, and this optical modulation isrecognized as a display pattern by an observer.

In displaying moving images, a liquid crystal display device has aproblem that a long response time of liquid crystal molecules causesafterimages or blurring of moving images. In order to improve themoving-image characteristics of a liquid crystal display device, adriving method called black insertion is employed in which black isdisplayed on the whole screen every other frame period.

Alternatively, a driving method called double-frame rate driving may beemployed in which a vertical synchronizing frequency is 1.5 times ormore, preferably, 2 times or more as high as a usual verticalsynchronizing frequency, whereby the moving-image characteristics areimproved.

Further alternatively, in order to improve the moving-imagecharacteristics of a liquid crystal display device, a driving method maybe employed in which a plurality of LEDs (light-emitting diodes) or aplurality of EL light sources are used to form a surface light source asa backlight, and each light source of the surface light source isindependently driven in a pulsed manner in one frame period. As thesurface light source, three or more kinds of LEDs may be used or an LEDemitting white light may be used. Since a plurality of LEDs can becontrolled independently, the light emission timing of LEDs can besynchronized with the timing at which the liquid crystal layer isoptically modulated. According to this driving method, LEDs can bepartly turned off; therefore, an effect of reducing power consumptioncan be obtained particularly in the case of displaying an image having alarge black part.

By combining these driving techniques, the display characteristics of aliquid crystal display device, such as moving-image characteristics, canbe improved as compared to those of conventional liquid crystal displaydevices.

The first thin film transistor 420 obtained in this embodiment includesa stack of oxide semiconductor layers having different electricalconductivity and has good dynamic characteristics. Accordingly, thosedriving techniques can be employed in combination.

In addition, according to this embodiment, a display device having highelectrical properties and high reliability can be provided at low costs.

Embodiment 6

Thin film transistors including a stack of oxide semiconductor layershaving different electrical conductivity can be manufactured and aliquid crystal display device having a display function can bemanufactured using the thin film transistors not only in a drivercircuit but also in a pixel portion. Further, part or the whole of thedriver circuit using the thin film transistors is formed over the samesubstrate as the pixel portion, whereby a system-on-panel can beobtained.

The liquid crystal display device includes a liquid crystal element(also referred to as a liquid crystal display element) as a displayelement.

In addition, the liquid crystal display device includes a panel in whicha display element is sealed, and a module in which an IC and the likeincluding a controller are mounted on the panel. This embodiment furtherrelates to one mode of an element substrate before the display elementis completed in a process for manufacturing the liquid crystal displaydevice, and the element substrate is provided with a plurality of pixelseach having a means for supplying current to the display element.Specifically, the element substrate may be in a state after only a pixelelectrode of the display element is formed, a state after a conductivefilm to be a pixel electrode is formed but before the conductive film isetched to be the pixel electrode, or any other states.

A liquid crystal display device in this specification refers to an imagedisplay device, a display device, or a light source (including alighting device). Further, the liquid crystal display device alsoincludes any of the following modules in its category: a module to whicha connector such as a flexible printed circuit (FPC), a tape automatedbonding (TAB) tape, or a tape carrier package (TCP) is attached; amodule having a TAB tape or a TCP at the end of which a printed wiringboard is provided; and a module in which an integrated circuit (IC) isdirectly mounted on a display element by a chip-on-glass (COG) method.

An appearance and a cross section of a liquid crystal display panel,which is one embodiment of liquid crystal display device, will bedescribed with reference to FIGS. 18A1, 18A2, and 18B. FIGS. 18A1 and18A2 are top views of panels in which a liquid crystal element 4013 issealed with a sealant 4005 between a first substrate 4001 and a secondsubstrate 4006. FIG. 18B is a cross-sectional view taken along M-N ofFIGS. 18A1 and 18A2.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scan line driver circuit 4004 which are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scan line driver circuit 4004. Thus, the pixelportion 4002 and the scan line driver circuit 4004 as well as a liquidcrystal layer 4008 are sealed with the sealant 4005 between the firstsubstrate 4001 and the second substrate 4006. A blue-phase liquidcrystal material is used for the liquid crystal layer 4008 in thisembodiment without particular limitation. A liquid crystal materialexhibiting a blue phase has a short response time of 1 millisecond orless from the state of applying no voltage to the state of applyingvoltage, whereby short-time response is possible. A blue-phase liquidcrystal material includes liquid crystal and a chiral agent. The chiralagent is employed to align the liquid crystal in a helical structure andto make the liquid crystal exhibit a blue phase. For example, a liquidcrystal material into which a chiral agent is mixed at 5 wt % or moremay be used for the liquid crystal layer. As a liquid crystal, athermotropic liquid crystal, a low molecular liquid crystal, a highmolecular liquid crystal, a ferroelectric liquid crystal, ananti-ferroelectric liquid crystal, or the like is used.

In FIG. 18A1, a signal line driver circuit 4003 that is formed using asingle crystal semiconductor film or a polycrystalline semiconductorfilm over a substrate separately prepared is mounted in a region that isdifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001. In contrast, FIG. 18A2 illustrates an example in whichpart of a signal line driver circuit is formed over the first substrate4001 with use of a thin film transistor including a stack of oxidesemiconductor layers having different electrical conductivity. In FIG.18A2, a signal line driver circuit 4003 b is formed over the firstsubstrate 4001 and a signal line driver circuit 4003 a that is formedusing a single crystal semiconductor film or a polycrystallinesemiconductor filmover the substrate separately prepared is mounted onthe first substrate 4001.

Note that there is no particular limitation on a connection method ofthe driver circuit which is separately formed, and a COG method, a wirebonding method, a TAB method, or the like can be used. FIG. 18A1illustrates an example in which the signal line driver circuit 4003 ismounted by a COG method and FIG. 18A2 illustrates an example in whichthe signal line driver circuit 4003 is mounted by a TAB method.

Each of the pixel portion 4002 and the scan line driver circuit 4004which are provided over the first substrate 4001 includes a plurality ofthin film transistors. FIG. 18B illustrates a thin film transistor 4010included in the pixel portion 4002 and the thin film transistor 4011included in the scan line driver circuit 4004. An insulating layer 4020and an interlayer film 4021 are provided over the thin film transistors4010 and 4011. As the thin film transistor 4010, the first thin filmtransistor described in Embodiment 1 which includes a stack of oxidesemiconductor layers having different electrical conductivity as itssemiconductor layer is employed. As the thin film transistor 4011, thesecond thin film transistor described in Embodiment 1 which includes asingle layer of an In—Ga—Zn—O-based non-single-crystal film is employed.In this embodiment, the thin film transistors 4010 and 4011 aren-channel thin film transistors.

In addition, a pixel electrode layer 4030 and a common electrode layer4031 are provided over the first substrate 4001. The pixel electrodelayer 4030 is electrically connected to the thin film transistor 4010.The liquid crystal element 4013 includes the pixel electrode layer 4030,the common electrode layer 4031, and the liquid crystal layer 4008. Inthis embodiment, a method is used in which grayscale is controlled bygenerating an electric field which is substantially parallel to asubstrate (i.e., in a lateral direction) to move liquid crystalmolecules in a plane parallel to the substrate. In such a method, anelectrode structure used in an in plane switching (IPS) mode or a fringefield switching (FFS) mode can be used. Note that polarizing plates 4032and 4033 are provided on outer sides of the first substrate 4001 and thesecond substrate 4006, respectively.

As the first substrate 4001 and the second substrate 4006, glass,plastic, or the like having a light-transmitting property can be used.As plastic, a fiberglass-reinforced plastics (FRP) plate, a polyvinylfluoride (PVF) film, a polyester film, or an acrylic resin film can beused. Alternatively, a sheet in which aluminum foil is sandwiched by PVFfilms or polyester films can be used.

Reference numeral 4035 denotes a columnar spacer obtained by selectiveetching of an insulating film and is provided in order to control thethickness (a cell gap) of the liquid crystal layer 4008. Note that aspherical spacer may be used.

FIGS. 18A1, 18A2, and 18B illustrate examples of liquid crystal displaydevices in which a polarizing plate is provided on the outer side (theview side) of a substrate; however, the polarizing plate may be providedon the inner side of the substrate. The position of the polarizing platemay be determined as appropriate depending on the material of thepolarizing plate and conditions of the manufacturing process. Further, alight-blocking layer serving as a black matrix may be provided.

The interlayer film 4021 is a light-transmitting resin layer. Part ofthe interlayer film 4021 is a light-blocking layer 4012. Thelight-blocking layer 4012 covers the thin film transistors 4010 and4011. In FIG. 18B, a light-blocking layer 4034 is provided on the secondsubstrate 4006 to overlap with the thin film transistors 4010 and 4011.By the light-blocking layer 4012 and the light-blocking layer 4034,further improvement in contrast and in stabilization of the thin filmtransistors can be achieved.

When the light-blocking layer 4034 is provided, the intensity ofincident light on the semiconductor layers of the thin film transistorscan be attenuated. Accordingly, electric characteristics of the thinfilm transistors can be stabilized and prevented from being varied dueto photosensitivity of the oxide semiconductor.

The thin film transistors may be covered with the insulating layer 4020which serves as a protective film of the thin film transistors; however,there is no particular limitation to such a structure.

Note that the protective film is provided to prevent entry of impuritiesfloating in air, such as an organic substance, a metal substance, ormoisture, and is preferably a dense film. The protective film may beformed using a single layer or a stack of layers of a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconnitride oxide film, an aluminum oxide film, an aluminum nitride film, analuminum oxynitride film, or an aluminum nitride oxide film by asputtering method.

Further, in the case of forming another light-transmitting insulatinglayer as a planarizing insulating film, the light-transmittinginsulating layer can be formed from an organic material having heatresistance, such as polyimide, acrylic, benzocyclobutene, polyamide, orepoxy. As an alternative to such organic materials, it is possible touse a low-dielectric constant material (a low-k material), asiloxane-based resin, phosphosilicate glass (PSG), borophosphosilicateglass (BPSG), or the like. Note that the insulating layer may be formedby stacking a plurality of insulating films formed of any of thesematerials.

The method for the formation of the stacked insulating layers is notlimited to a particular method and the following method can be useddepending on the material: a sputtering method, an SOG method, spincoating, dip coating, spray coating, a droplet discharging method (e.g.,an ink jetting method, screen printing, or offset printing), a doctorknife, a roll coater, a curtain coater, a knife coater, or the like. Inthe case of forming the insulating layers with the use of a materialsolution, the semiconductor layer may be annealed (at 200° C. to 400°C.) at the same time of a baking step. When the baking step of theinsulating layers and the annealing of the semiconductor layer arecombined, a liquid crystal display device can be manufacturedefficiently.

The pixel electrode layer 4030 and the common electrode layer 4031 canbe formed from a light-transmitting conductive material such as indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, or indium tin oxide to which silicon oxide isadded.

A conductive composition containing a conductive high molecule (alsoreferred to as a conductive polymer) can also be used for the pixelelectrode layer 4030 and the common electrode layer 4031.

In addition, a variety of signals and potentials are supplied to thesignal line driver circuit 4003 which is formed separately, the scanline driver circuit 4004, or the pixel portion 4002 from an FPC 4018.

Further, since the thin film transistor is easily broken by staticelectricity and the like, a protective circuit for protecting the drivercircuits is preferably provided over the same substrate for a gate lineor a source line. The protective circuit is preferably formed using anonlinear element in which an oxide semiconductor is used.

In FIGS. 18A1, 18A2, and 18B, a connecting terminal electrode 4015 isformed using the same conductive film as that of the pixel electrodelayer 4030, and a terminal electrode 4016 is formed using the sameconductive film as that of source and drain electrode layers of the thinfilm transistors 4010 and 4011.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 through an anisotropic conductive film4019.

FIGS. 18A1, 18A2, and 18B illustrate an example in which the signal linedriver circuit 4003 is formed separately and mounted on the firstsubstrate 4001 without limitation. The scan line driver circuit may beformed separately and then mounted, or only part of the signal linedriver circuit or part of the scan line driver circuit may be formedseparately and then mounted.

FIG. 19 illustrates an example of a cross-sectional structure of aliquid crystal display device in which an element substrate 2600 and acounter substrate 2601 are attached to each other with a sealant 2602,and an element layer 2603 including a TFT or the like and a liquidcrystal layer 2604 are provided between the substrates.

In the case where color display is performed, light-emitting diodeswhich emit light of plural colors are arranged in a backlight portion.In the case of an RGB mode, a red light-emitting diode 2910R, a greenlight-emitting diode 2910G, and a blue light-emitting diode 2910B aredisposed in each of the regions into which a display area of the liquidcrystal display device is divided.

A polarizing plate 2606 is provided on the outer side of the countersubstrate 2601, and a polarizing plate 2607 and an optical sheet 2613are provided on the outer side of the element substrate 2600. A lightsource is formed using the red light-emitting diode 2910R, the greenlight-emitting diode 2910G, the blue light-emitting diode 2910B, and areflective plate 2611. An LED control circuit 2912 provided for acircuit substrate 2612 is connected to a wiring circuit portion 2608 ofthe element substrate 2600 through a flexible wiring board 2609 andfurther includes an external circuit such as a control circuit or apower source circuit.

This embodiment describes a field-sequential liquid crystal displaydevice in which the LEDs are individually made to emit light by this LEDcontrol circuit 2912 without particular limitation. It is also possibleto use a cold cathode fluorescent lamp or a white LED as a light sourceof the backlight and to provide a color filter.

Further, this embodiment employs an electrode structure used in an inplane switching (IPS) mode without particular limitation. A twistednematic (TN) mode, a multi-domain vertical alignment (MVA) mode, apatterned vertical alignment (PVA) mode, an axially symmetric alignedmicro-cell (ASM) mode, an optical compensated birefringence (OCB) mode,a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquidcrystal (AFLC) mode, or the like can be used.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 7

In this embodiment, an example in which exposure using a multi-tone maskis performed in order to reduce the number of masks is described. Notethat a multi-tone mask can perform three levels of light exposure toobtain an exposed portion, a half-exposed portion, and an unexposedportion. Light has a plurality of intensities after passing through amulti-tone mask. One-time light exposure and development process with amulti-tone mask can form a resist mask with regions of pluralthicknesses (typically, two kinds of thicknesses). Accordingly, by usinga multi-tone mask, the number of photomasks can be reduced.

As typical examples of a multi-tone mask, there are a gray-tone mask, ahalf-tone mask, and the like.

A gray-tone mask includes a substrate having a light-transmittingproperty, and a light-blocking portion and a diffraction grating whichare formed thereover. The light transmittance of the light-blockingportion is 0%. On the other hand, the diffraction grating has alight-transmitting portion in a slit form, a dot form, a mesh form, orthe like with intervals which are equal to or less than the resolutionlimit of light used for the light exposure; thus, light transmittancecan be controlled. The diffraction grating can have regularly-arrangedslits, dots, or meshes, or irregularly-arranged slits, dots, or meshes.

A half-tone mask includes a substrate having a light-transmittingproperty, and a semi-light-transmitting portion and a light-blockingportion which are formed thereover. The semi-light-transmitting portioncan be formed using MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like. Thelight-blocking portion can be formed using a light-blocking materialwhich absorbs light, such as chromium or chromium oxide. When thehalf-tone mask is irradiated with light for exposure, the lighttransmittance of the light-blocking portion is 0% and the lighttransmittance of a region where the light-blocking portion and thesemi-light-transmitting portion are not provided is 100%. The lighttransmittance of the semi-light-transmitting portion can be controlledin the range of from 10% to 70%. The light transmittance of thesemi-light-transmitting portion can be controlled by controlling amaterial used for the semi-light-transmitting portion.

FIGS. 20A to 20E are cross-sectional views of a manufacturing process ofa thin film transistor 360.

In FIG. 20A, a gate electrode layer 351 is formed over a substrate 350on which an insulating film 357 is formed. In this embodiment, a siliconoxide film (having a thickness of 100 nm) is used as the insulating film357. A gate insulating layer 352, a metal thin film 380, an oxidesemiconductor film 381, and a conductive film 383 are stacked in thatorder over the gate electrode layer 351. In this embodiment, as themetal thin film 380, a stack of a 3-nm-thick indium film formed by asputtering method and a 3-nm-thick zinc film formed by a sputteringmethod is employed.

A mask 384 is formed over the gate insulating layer 352, the metal thinfilm 380, the oxide semiconductor film 381, and the conductive film 383.

In this embodiment, an example in which light exposure using amulti-tone (high-tone) mask is performed for forming the mask 384 isdescribed.

The light exposure is performed using the multi-tone mask through whichlight is transmitted so as to have a plurality of intensities, and thendevelopment is performed, whereby the mask 384 having regions withdifferent thicknesses can be formed as illustrated in FIG. 20B. By usinga multi-tone mask, the number of light-exposure masks can be reduced.

Next, a first etching step is performed using the mask 384 to etch themetal thin film 380, the oxide semiconductor film 381, and theconductive film 383 into island shapes. As a result, a metal thin film390, an oxide semiconductor layer 385 and a conductive layer 387 whichare patterned can be formed (see FIG. 20B).

Then, the resist mask 384 is subjected to ashing. As a result, the areaand thickness of the mask are reduced. At this time, a region of themask with a smaller thickness (a region overlapping with a part of thegate electrode layer 351) is removed and masks 388 which are separatedfrom each other can be formed (see FIG. 20C).

A second etching step is performed using the masks 388; whereby theoxide semiconductor layer 385 and the conductive layer 387 are etchedinto a semiconductor layer 353 and source and drain electrode layers 355a and 355 b (see FIG. 20D). Note that the semiconductor layer 353 is apartly etched semiconductor layer having a groove (depression) andhaving an end portion which is partly etched and exposed.

When the etching is performed using a chlorine-based gas (Cl₂) to whichan oxygen gas (O₂) is added (preferably at 15% or higher), in the caseof using a silicon oxynitride film as the gate insulating layer 352, theselectivity of the In—Ga—Zn—O-based non-single-crystal film of the oxidesemiconductor layer 385 with respect to the gate insulating layer 352can be increased. Therefore, only the oxide semiconductor film 381 canbe selectively etched.

When the oxide semiconductor film 381 and the conductive film 383 aredry-etched in the first etching step, the oxide semiconductor film 381and the conductive film 383 are etched anisotropically. In this manner,the end portion of the mask 384 is aligned with end portions of theoxide semiconductor layer 385 and the conductive layer 387, and theseend portions become continuous.

In a manner similar to the above, when the oxide semiconductor layer 385and the conductive layer 387 are dry-etched in the second etching step,the oxide semiconductor layer 385 and the conductive layer 387 areetched anisotropically. In this manner, the end portions of the masks388 are aligned with end portions and side surfaces of the depression ofthe semiconductor layer 353 and end portions of the source and drainelectrode layers 355 a and 355 b to become continuous.

In this embodiment, the semiconductor layer 353 and the source and drainelectrode layers 355 a and 355 b have the same tapered angle at therespective end portions and are stacked so that the end portions arecontinuous. However, since the etching rates of these layers changedepending on the etching conditions or materials for the oxidesemiconductor layer and the conductive layer, the tapered angles aredifferent and the end portions are not continuous in some cases.

Then, the mask 388 is removed.

Then, heat treatment is performed in an atmosphere containing oxygen at200° C. to 600° C. to oxidize the metal thin film 390; thus, a firstoxide semiconductor layer 391 is formed (see FIG. 20E). In thisembodiment, the first oxide semiconductor layer 391 is a mixed layer ofindium oxide and zinc oxide.

Through the above steps, an inverted staggered thin film transistor 360including a stack of the first oxide semiconductor layer 391 and theoverlaying semiconductor layer 353, which is a second oxidesemiconductor layer, can be manufactured.

The use of a resist mask having regions of plural thicknesses(typically, two kinds of thicknesses) formed with use of a multi-tonemask as in this embodiment enables the number of resist masks to bereduced; therefore, the process can be simplified and cost can bereduced. Accordingly, a highly reliable semiconductor device can bemanufactured at a low cost with high productivity.

In this embodiment, an example is described in which both the thin filmtransistor in the driver circuit and the thin film transistor in thepixel portion are inverted staggered thin film transistors 360 includinga stack of the first oxide semiconductor layer 391 and the overlayingsemiconductor layer 353, which is the second oxide semiconductor layer.In other words, this embodiment describes an example in whichsubstantially the same structure is employed for the thin filmtransistors in the driver circuit and in the pixel portion, and themanufacturing method does not differ between the circuits.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 8

Different from the example of a bottom-gate structure described inEmbodiment 1 or Embodiment 2, an example of a bottom-contact structure(also referred to as an inverted-coplanar structure) will be describedin this embodiment below with reference to FIGS. 21A to 21C.

An example of a manufacturing process of an inverter circuit isillustrated in FIGS. 21A to 21C.

A first conductive film is formed over a substrate 740 by a sputteringmethod and the first conductive film is etched as selected using a firstphotomask to form a first gate electrode 741 and a second gate electrode742. Next, a gate insulating layer 743 covering the first gate electrode741 and the second gate electrode 742 is formed by a plasma CVD methodor a sputtering method. The gate insulating layer 743 can be formed tohave a single layer or a stack of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, or a silicon nitride oxidelayer by a CVD method, a sputtering method, or the like. Alternatively,the gate insulating layer 743 can be formed of a silicon oxide layer bya CVD method using an organosilane gas.

Next, the gate insulating layer 743 is etched as selected using a secondphotomask to form a contact hole 744 that reaches the second gateelectrode 742. A cross-sectional view of the steps so far corresponds toFIG. 21A.

Then, a second conductive film is formed by a sputtering method and thesecond conductive film is etched as selected using a third photomask toform a first wiring 746, a second wiring 750, and a third wiring 751.The third wiring 751 is directly in contact with the second gateelectrode 742 through the contact hole 744.

Next, a stack of a metal thin film and an oxide semiconductor film isformed by a sputtering method. Note that reverse sputtering in whichplasma is generated after introduction of an argon gas is preferablyperformed to remove dust attached to a surface of the gate insulatinglayer 743 and the bottom surface of the contact hole 744 before themetal thin film is formed by a sputtering method. The reverse sputteringrefers to a method in which, without application of voltage to a targetside, an RF power source is used for application of voltage to asubstrate side in an argon atmosphere to modify a surface. Note thatnitrogen, helium, or the like may be used instead of an argonatmosphere. Alternatively, the reverse sputtering may be performed in anargon atmosphere to which oxygen, hydrogen, N₂O, or the like is added.Further alternatively, the reverse sputtering may be performed in anargon atmosphere to which Cl₂, CF₄, or the like is added.

Next, the metal thin film and the oxide semiconductor film are etched asselected using the fourth photomask.

Next, heat treatment is performed at 200° C. to 600° C. in air or anitrogen atmosphere. By the heat treatment, the metal thin film isoxidized to be a first oxide semiconductor layer 748 and a third oxidesemiconductor layer 749. After the heat treatment, the second oxidesemiconductor layer 745 is formed over the first oxide semiconductorlayer 748, whereby a first thin film transistor 760 is formed. Note thatthe electrical conductivity of the first oxide semiconductor layer 748is different from that of the second oxide semiconductor layer 745. Theelectrical conductivity of the first oxide semiconductor layer 748 ishigher, which contributes to an improvement in electrical field mobilityof the first thin film transistor 760. Similarly, a fourth oxidesemiconductor layer 747 is formed over the third oxide semiconductorlayer 749, whereby a second thin film transistor 761 is formed. Notethat the timing of this heat treatment is not particularly limited andthe heat treatment may be performed anytime after the formation of thesecond oxide semiconductor film. For example, if the heat treatment isperformed before etching using the fourth photomask to oxidize the metalthin film and form the first oxide semiconductor film, the stack of theoxide semiconductor films is etched in the following etching using thefourth photomask; thus, etching with reduced etching residue can beperformed.

Next, a protective layer 752 is formed and the protective layer 752 isetched as selected using a fifth photomask to form a contact hole. Afterthat, a third conductive film is formed. Lastly, the third conductivefilm is etched as selected using a sixth photomask to form a connectionwiring 753 that is electrically connected to the second wiring 750. Across-sectional view of the steps so far corresponds to FIG. 21C.

Note that the order of the steps described above is merely an exampleand there is no limitation. For example, although the number ofphotomasks increases by one, etching of the metal thin film and etchingof part of the oxide semiconductor film may be separately performedusing different photomasks.

Further, it is also possible to form an In—Ga—Zn—O—N-basednon-single-crystal film by a sputtering method over the secondconductive film and then pattern the In—Ga—Zn—O—N-basednon-single-crystal film so as to serve as n⁺-type layers between secondoxide semiconductor layer 745 and the first wiring 746 and the secondwiring 750, and n⁺-type layers between the fourth oxide semiconductorlayer 747 and the second wiring 750 and the third wiring 751. In thatcase, In—Ga—Zn—O—N-based non-single-crystal films are provided in aregion overlapping with the first wiring 746 and the second oxidesemiconductor layer 745, a region overlapping with the second wiring 750and the second oxide semiconductor layer 745, a region overlapping withthe second wiring 750 and the fourth oxide semiconductor layer 747, anda region overlapping with the third wiring 751 and the fourth oxidesemiconductor layer 747.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 9

In this embodiment, an example of an electronic paper will be describedas a semiconductor device.

FIG. 22A is a cross-sectional view illustrating an active matrixelectronic paper. A thin film transistor 581 used for a display portionof this semiconductor device can be manufactured in a manner similar tothat of the second thin film transistor described in Embodiment 1. Thethin film transistor 581 includes an oxide semiconductor film as itssemiconductor layer and has high electrical characteristics. In thisembodiment, a thin film transistor including a Zn—O—Si-based oxidesemiconductor as its semiconductor layer and having high electricalcharacteristics is used. Further, a driver circuit which includes a thinfilm transistor including a Zn—O—Si-based oxide semiconductor as itssemiconductor layer and having high electrical characteristics mayoptionally be provided over the same substrate. Further, it is alsopossible to use the first thin film transistor in Embodiment 1 which hasa stack of oxide semiconductor layers as the thin film transistor 581 inthis embodiment.

The electronic paper of FIG. 22A is an example of a display device inwhich a twisting ball display system is employed. The twisting balldisplay system refers to a method in which spherical particles eachcolored in black and white are arranged between a first electrode layerand a second electrode layer which are electrode layers used for adisplay element, and a potential difference is generated between thefirst electrode layer and the second electrode layer to controlorientation of the spherical particles, so that display is performed.

The thin film transistor 581 sealed between a substrate 580 and asubstrate 596 is a thin film transistor with a bottom-gate structure,and a source or drain electrode layer thereof is in contact with a firstelectrode layer 587 through an opening formed in insulating layers 583,584, and 585, whereby the thin film transistor 581 is electricallyconnected to the first electrode layer 587. Between the first electrodelayer 587 and a second electrode layer 588, spherical particles 589 eachhaving a black region 590 a, a white region 590 b, and a cavity 594around the regions which is filled with liquid are provided. A spacearound the spherical particles 589 is filled with a filler 595 such as aresin (see FIG. 22A). In this embodiment, the first electrode layer 587corresponds to a pixel electrode, and the second electrode layer 588corresponds to a common electrode. The second electrode layer 588 iselectrically connected to a common potential line provided over the samesubstrate as the thin film transistor 581. With the use of a commonconnection portion, the second electrode layer 588 can be electricallyconnected to the common potential line through conductive particlesprovided between a pair of substrates.

Instead of the twisting ball, an electrophoretic element can be used. Amicrocapsule having a diameter of about 10 μm to 200 μm in whichtransparent liquid, positively-charged white microparticles, andnegatively-charged black microparticles are encapsulated is used. In themicrocapsules which are provided between the first electrode layer andthe second electrode layer, when an electric field is applied betweenthe first electrode layer and the second electrode layer, the whitemicroparticles and the black microparticles move to opposite sides fromeach other, so that white or black can be displayed. A display elementusing this principle is an electrophoretic display element and is calledan electronic paper. The electrophoretic display element has higherreflectance than a liquid crystal display element, and thus, anauxiliary light is unnecessary, power consumption is low, and a displayportion can be recognized in a dim place. In addition, even when poweris not supplied to the display portion, an image which has beendisplayed once can be maintained. Accordingly, a displayed image can bestored even if a semiconductor device having a display function (whichmay be referred to simply as a display device or a semiconductor deviceprovided with a display device) is distanced from an electric wavesource.

By manufacturing the thin film transistor in the process described inEmbodiment 1, an electronic paper can be manufactured as a semiconductordevice at low cost. An electronic paper can be used for electronicappliances of a variety of fields for displaying information. Forexample, an electronic paper can be used for an electronic book reader(an e-book reader), posters, advertisement in vehicles such as trains,or displays of various cards such as credit cards. Examples of suchelectronic appliances are illustrated in FIG. 22B.

FIG. 22B illustrates an example of an electronic book reader 2700. Forexample, the electronic book reader 2700 includes two housings 2701 and2703. The housings 2701 and 2703 are combined with a hinge 2711 so thatthe electronic book reader 2700 can be opened and closed along the hinge2711. With such a structure, the electronic book reader 2700 can behandled like a paper book.

A display portion 2705 is incorporated in the housing 2701 and a displayportion 2707 is incorporated in the housing 2703. The display portion2705 and the display portion 2707 may display one image, or may displaydifferent images. In the structure where different images are displayedon the display portion 2705 and the display portion 2707, for example,the right display portion (the display portion 2705 in FIG. 22B) candisplay text and the left display portion (the display portion 2707 inFIG. 22B) can display images.

FIG. 22B illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power supply switch 2721, an operation key 2723, aspeaker 2725, and the like. The page can be turned with the operationkey 2723. Note that a keyboard, a pointing device, and the like may beprovided on the same plane as the display portion of the housing.Further, a rear surface or a side surface of the housing may be providedwith an external connection terminal (an earphone terminal, a USBterminal, a terminal which can be connected with a variety of cablessuch as an AC adapter or a USB cable, and the like), a storage mediuminserting portion, or the like. Moreover, the electronic book reader2700 may have a function of an electronic dictionary.

Further, the electronic book reader 2700 may send and receiveinformation wirelessly. Desired book data or the like can be purchasedand downloaded from an electronic book server wirelessly.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 10

A semiconductor device which has a thin film transistor including anoxide semiconductor layer can be applied to a variety of electronicappliances (including game machines). Examples of electronic appliancesare a television set (also referred to as a television or a televisionreceiver), a monitor of a computer or the like, a camera such as adigital camera or a digital video camera, a digital photo frame, acellular phone (also referred to as a mobile phone or a mobile phoneset), a portable game console, a portable information terminal, an audioplayback device, a large-sized game machine such as a pachinko machine,and the like.

FIG. 23A illustrates an example of a television device 9600. A displayportion 9603 is incorporated in a housing 9601 of the television device9600. The display portion 9603 can display images. Here, the back of thehousing 9601 is supported so that the television device 9600 is fixed toa wall.

The television device 9600 can be operated with an operation switch ofthe housing 9601 or a separate remote control 9610. The channel andvolume can be controlled with operation keys 9609 of the remote control9610 and images displayed on the display portion 9603 can be controlled.Moreover, the remote control 9610 may have a display portion 9607 onwhich the information outgoing from the remote control 9610 isdisplayed.

Note that the television device 9600 is provided with a receiver, amodem, and the like. With the receiver, general television broadcastingcan be received. Moreover, when the display device is connected to acommunication network with or without wires via the modem, one-way (froma sender to a receiver) or two-way (e.g., between a sender and areceiver or between receivers) information communication can beperformed.

FIG. 23B illustrates a portable game console including a housing 9881and a housing 9891 which are jointed with a connector 9893 so as to beopened and closed. A display portion 9882 and a display portion 9883 areincorporated in the housing 9881 and the housing 9891, respectively. Theportable game console illustrated in FIG. 23B additionally includes aspeaker portion 9884, a storage medium inserting portion 9886, an LEDlamp 9890, an input means (operation keys 9885, a connection terminal9887, a sensor 9888 (having a function of measuring force, displacement,position, speed, acceleration, angular speed, rotational frequency,distance, light, liquid, magnetism, temperature, chemical substance,sound, time, hardness, electric field, current, voltage, electric power,radiation, flow rate, humidity, gradient, vibration, smell, or infraredray), and a microphone 9889), and the like. Needless to say, thestructure of the portable game console is not limited to the above, andmay be any structure which is provided with at least a semiconductordevice. The portable game console may include other accessory equipmentas appropriate. The portable game console illustrated in FIG. 23B has afunction of reading a program or data stored in a storage medium todisplay it on the display portion, and a function of sharing informationwith another portable game console via wireless communication. Theportable game console of FIG. 23B can have a variety of functions otherthan those above.

FIG. 24A illustrates an example of a cellular phone 1000. The cellularphone 1000 includes a housing 1001 in which a display portion 1002 isincorporated, an operation button 1003, an external connection port1004, a speaker 1005, a microphone 1006, and the like.

Information can be input to the cellular phone 1000 illustrated in FIG.24A by touching the display portion 1002 with a finger or the like.Moreover, users can make a call or write an e-mail by touching thedisplay portion 1002 with their fingers or the like.

There are mainly three screen modes of the display portion 1002. Thefirst mode is a display mode mainly for displaying images. The secondmode is an input mode mainly for inputting information such as text. Thethird mode is a display-and-input mode in which two modes of the displaymode and the input mode are mixed.

For example, in the case of making a call or writing an e-mail, thedisplay portion 1002 is set to a text input mode mainly for inputtingtext, and characters displayed on a screen can be input. In this case,it is preferable to display a keyboard or number buttons on almost theentire screen of the display portion 1002.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside thecellular phone 1000, display on the screen of the display portion 1002can be automatically switched by detecting the direction of the cellularphone 1000 (whether the cellular phone 1000 is placed horizontally orvertically for a landscape mode or a portrait mode).

Further, the screen modes are switched by touching the display portion1002 or operating the operation button 1003 of the housing 1001.Alternatively, the screen modes can be switched depending on kinds ofimages displayed on the display portion 1002. For example, when a signalfor an image displayed on the display portion is data of moving images,the screen mode is switched to the display mode. When the signal is textdata, the screen mode is switched to the input mode.

Further, in the input mode, a signal is detected by an optical sensor inthe display portion 1002 and if input by touching the display portion1002 is not performed for a certain period, the screen mode may becontrolled so as to be switched from the input mode to the display mode.

The display portion 1002 can also function as an image sensor. Forexample, an image of a palm print, a fingerprint, or the like is takenby touching the display portion 1002 with the palm or the finger,whereby personal authentication can be performed. Moreover, when abacklight or sensing light source which emits near-infrared light isprovided in the display portion, an image of finger veins, palm veins,or the like can be taken.

FIG. 24B illustrates another example of a cellular phone. The cellularphone in FIG. 24B has a display device 9410 provided with a housing 9411including a display portion 9412 and operation buttons 9413, and acommunication device 9400 provided with a housing 9401 includingoperation buttons 9402, an external input terminal 9403, a microphone9404, a speaker 9405, and a light-emitting portion 9406 that emits lightwhen a phone call is received. The display device 9410 which has adisplay function can be detachably attached to the communication device9400 which has a phone function in two directions represented by thearrows. Thus, the display device 9410 and the communication device 9400can be attached to each other along their short sides or long sides. Inaddition, when only the display function is needed, the display device9410 can be detached from the communication device 9400 and used alone.Images or input information can be transmitted or received by wirelessor wire communication between the communication device 9400 and thedisplay device 9410, each of which has a rechargeable battery.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

This application is based on Japanese Patent Application serial no.2008-333788 filed with Japan Patent Office on Dec. 26, 2008, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a semiconductor device, comprising:forming a gate electrode over an insulating surface; forming aninsulating layer over the gate electrode; forming a metal thin film overthe insulating layer; forming an oxide semiconductor layer over themetal thin film; and performing oxidation treatment on at least a partof the metal thin film after forming the oxide semiconductor layer. 2.The method for manufacturing a semiconductor device, according to claim1, wherein the oxidation treatment is heat treatment which is performedin any one of an atmosphere containing oxygen, air, and a nitrogenatmosphere.
 3. The method for manufacturing a semiconductor device,according to claim 1, wherein the oxide semiconductor layer contains atleast one of indium, gallium, and zinc.
 4. The method for manufacturinga semiconductor device, according to claim 1, wherein the metal thinfilm contains at least one of indium, zinc, tin, molybdenum, andtungsten.
 5. The method for manufacturing a semiconductor device,according to claim 1, wherein at least one of elements which arecontained in the oxide semiconductor layer is the same as an elementcontained in the metal thin film.
 6. The method for manufacturing asemiconductor device, according to claim 1, wherein the metal thin filmis formed by any one of a sputtering method, a vacuum vapor depositionmethod, and a coating method.
 7. The method for manufacturing asemiconductor device, according to claim 1, wherein a thickness of theoxide semiconductor layer is 30 nm to 150 nm, inclusive.
 8. The methodfor manufacturing a semiconductor device, according to claim 1, whereina thickness of the metal thin film is smaller than a thickness of theoxide semiconductor layer.
 9. A semiconductor device comprising: amatrix circuit and a driver circuit which drives the matrix circuit overan insulating surface, wherein the driver circuit comprises a first thinfilm transistor including a stack of a first oxide semiconductor layerand a second oxide semiconductor layer, the stack overlapping with afirst gate electrode with a first gate insulating film interposedtherebetween, wherein the matrix circuit includes a second thin filmtransistor, the second thin film transistor including a third oxidesemiconductor layer overlapping with a second gate electrode with asecond gate insulating film interposed therebetween, wherein the firstoxide semiconductor layer comprises a first material, wherein the secondoxide semiconductor layer comprises a second material being differentfrom the first material, and wherein the third oxide semiconductor layercomprises the second material.
 10. The semiconductor device according toclaim 9, wherein electrical resistivity of the first oxide semiconductorlayer is lower than electrical resistivity of the second oxidesemiconductor layer.
 11. The semiconductor device according to claim 9,wherein the first gate insulating film is over the first gate electrode,wherein the first oxide semiconductor layer is over the first gateinsulating film, and wherein the second oxide semiconductor layer isover the first oxide semiconductor layer.
 12. The semiconductor deviceaccording to claim 9, wherein the second gate insulating film is overthe second gate electrode, and wherein the third oxide semiconductorlayer is over the second gate insulating film.
 13. The semiconductordevice according to claim 9, wherein the second oxide semiconductorlayer contains at least one of indium, gallium, and zinc.
 14. Thesemiconductor device according to claim 9, wherein a thickness of thesecond oxide semiconductor layer and a thickness of the third oxidesemiconductor layer are each 30 nm to 150 nm, inclusive.
 15. Thesemiconductor device according to claim 9, wherein a thickness of thefirst oxide semiconductor layer is smaller than a thickness of thesecond oxide semiconductor layer.
 16. A method for manufacturing asemiconductor device comprising a matrix circuit and a driver circuitconfigured to drive the matrix circuit over a substrate, comprising:forming a first oxide semiconductor layer over the substrate in a matrixcircuit region and a driver circuit region; removing the first oxidesemiconductor layer from the matrix circuit region by etching; andforming a second oxide semiconductor layer and a third oxidesemiconductor layer, the second oxide semiconductor layer being formedover the first oxide semiconductor layer in the driver circuit regionand the third oxide semiconductor layer being formed over the substratein the matrix circuit region, wherein a first thin film transistor inthe driver circuit region comprises a stack of the first oxidesemiconductor layer and the second oxide semiconductor layer, andwherein a second thin film transistor in the matrix circuit regioncomprises the third oxide semiconductor layer.
 17. The method formanufacturing a semiconductor device, according to claim 16, whereinelectrical resistivity of the first oxide semiconductor layer is lowerthan electrical resistivity of the second oxide semiconductor layer. 18.The method for manufacturing a semiconductor device, according to claim16, wherein the first oxide semiconductor layer comprises a firstmaterial, wherein the second oxide semiconductor layer comprises asecond material being different from the first material, and wherein thethird oxide semiconductor layer comprises the second material.
 19. Amethod for manufacturing a semiconductor device which includes a matrixcircuit and a driver circuit configured to drive the matrix circuit overa substrate, comprising: forming a metal thin film over the substrate ina matrix circuit region and a driver circuit region; removing the metalthin film from the matrix circuit region by etching; forming a firstoxide semiconductor layer over the metal thin film in the driver circuitregion and over the substrate in the matrix circuit region; and forminga second oxide semiconductor layer by performing oxidation treatment onthe metal thin film after forming the oxide semiconductor layer, whereina first thin film transistor comprises a stack of the first oxidesemiconductor layer and the second oxide semiconductor layer in thedriver circuit region, and wherein a second thin film transistorcomprises a third oxide semiconductor layer in the matrix circuitregion.
 20. The method for manufacturing a semiconductor device,according to claim 19, wherein the oxidation treatment is heat treatmentwhich is performed in any one of an atmosphere containing oxygen, air,and a nitrogen atmosphere.
 21. The method for manufacturing asemiconductor device, according to claim 19, wherein the first oxidesemiconductor layer contains at least one of indium, gallium, and zinc.22. The method for manufacturing a semiconductor device, according toclaim 19, wherein the metal thin film contains at least one of indium,zinc, tin, molybdenum, and tungsten.
 23. The method for manufacturing asemiconductor device, according to claim 19, wherein at least one ofelements which are contained in the second oxide semiconductor layer isthe same as an element contained in the metal thin film.
 24. The methodfor manufacturing a semiconductor device, according to claim 19, whereinthe metal thin film is formed by any one of a sputtering method, avacuum vapor deposition method, and a coating method.
 25. The method formanufacturing a semiconductor device, according to claim 19, wherein athickness of the first oxide semiconductor layer is 30 nm to 150 nm,inclusive.
 26. The method for manufacturing a semiconductor device,according to claim 19, wherein a thickness of the metal thin film issmaller than a thickness of the first oxide semiconductor layer.
 27. Themethod for manufacturing a semiconductor device, according to claim 19,wherein electrical resistivity of the second oxide semiconductor layeris lower than electrical resistivity of the first oxide semiconductorlayer.
 28. The method for manufacturing a semiconductor device,according to claim 19, wherein the first oxide semiconductor layercomprises a first material, wherein the second oxide semiconductor layercomprises a second material being different from the first material, andwherein the third oxide semiconductor layer comprises the firstmaterial.